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FGB5N60UNDF

FGB5N60UNDF
Mfr. #:
FGB5N60UNDF
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V 5A NPT IGBT
生命週期:
製造商新產品
數據表:
FGB5N60UNDF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGB5N60UNDF 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-263AB-3
安裝方式：
貼片/貼片
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2.4 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
10 A
Pd - 功耗：
73.5 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
FGB5N60UNDF
打包：
捲軸
品牌：
安森美半導體/飛兆半導體
柵極-發射極漏電流：
+/- 10 nA
產品類別：
IGBT晶體管
出廠包裝數量：
800
子類別：
IGBT
單位重量：
0.046296 oz
Tags
FGB5, FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
型號 製造商 描述 庫存 價格
FGB5N60UNDF
DISTI # 26733835		ON Semiconductor600V 5A NPT IGBT2400
  • 9600:$0.7729
  • 4800:$0.7841
  • 2400:$0.8148
  • 800:$0.8742
FGB5N60UNDF
DISTI # FGB5N60UNDF-ND		ON SemiconductorIGBT 600V 10A 73.5W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.1190
FGB5N60UNDF
DISTI # V36:1790_06338232		ON Semiconductor600V 5A NPT IGBT0
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB5N60UNDF)
    RoHS: Compliant
    Min Qty: 800    		Europe - 0
    • 8000:€0.7199
    • 4800:€0.7709
    • 3200:€0.8309
    • 1600:€0.8999
    • 800:€1.0799
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB5N60UNDF)
    Min Qty: 368
    Container: Bulk    		Americas - 0
    • 3680:$0.8389
    • 1840:$0.8599
    • 1104:$0.8709
    • 736:$0.8829
    • 368:$0.8879
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB5N60UNDF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 8000:$0.7509
    • 4800:$0.7699
    • 3200:$0.7799
    • 1600:$0.7899
    • 800:$0.7959
    FGB5N60UNDF
    DISTI # 57AC1890    		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:73.5W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263AB,No. of Pins:3Pins,RoHS Compliant: Yes775
    • 1000:$1.1100
    • 500:$1.1700
    • 250:$1.2600
    • 100:$1.4500
    • 50:$1.6400
    • 25:$1.8100
    • 10:$1.9900
    • 1:$2.2500
    FGB5N60UNDF
    DISTI # 95T0027    		ON SemiconductorNPTPIGBT TO263 5A 600V / REEL0
    • 9600:$0.8230
    • 2400:$0.8470
    • 800:$0.9260
    • 1:$0.9320
    FGB5N60UNDF
    DISTI # 512-FGB5N60UNDF    		ON SemiconductorIGBT Transistors 600V 5A NPT IGBT
    RoHS: Compliant    		2160
    • 1:$1.7900
    • 10:$1.5200
    • 100:$1.2100
    • 500:$1.0600
    • 800:$0.8830
    • 2400:$0.8230
    • 4800:$0.7920
    • 9600:$0.7620
    FGB5N60UNDFON SemiconductorInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		1600
    • 1000:$0.9000
    • 500:$0.9400
    • 100:$0.9800
    • 25:$1.0200
    • 1:$1.1000
    FGB5N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		73530
    • 1000:$0.9000
    • 500:$0.9400
    • 100:$0.9800
    • 25:$1.0200
    • 1:$1.1000
    FGB5N60UNDFFairchild Semiconductor Corporation 1250
      FGB5N60UNDF
      DISTI # 2860234      		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB
      RoHS: Compliant      		775
      • 1600:$1.3500
      • 800:$1.6300
      • 100:$1.9900
      • 10:$2.4700
      • 1:$2.7500
      FGB5N60UNDF
      DISTI # 2860234      		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB
      RoHS: Compliant      		800
      • 500:£0.6870
      • 250:£0.8160
      • 100:£0.9450
      • 25:£1.1800
      • 5:£1.3000
      FGB5N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		Europe - 800
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        		 Power Management Specialized - PMIC Transformer Driver for Iso Power Supply
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        		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
        FQD5P20TM

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        PS081FN

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        		 IC RESISTIVE STRAIN GAUGE 56QFN
        可用性
        庫存:
        Available
        訂購:
        1985
        輸入數量:
        FGB5N60UNDF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$1.79
        US$1.79
        10
        US$1.52
        US$15.20
        100
        US$1.21
        US$121.00
        500
        US$1.06
        US$530.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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