NSBC114YDXV6T5G

Mfr. #:: NSBC114YDXV6T5G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
生命週期:: 製造商新產品
數據表:: NSBC114YDXV6T5G 數據表
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HTML Datasheet:: NSBC114YDXV6T5G Datasheet NSBC114YDXV6T5G Datasheet (P4-P6)NSBC114YDXV6T5G Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - 預偏置

RoHS：: Y

配置：: 雙重的

晶體管極性：: NPN

典型輸入電阻：: 10 kOhms

典型電阻比：: 0.21

安裝方式：: 貼片/貼片

包裝/案例：: SOT-563-6

DC 集電極/基極增益 hfe 最小值：: 80

集電極-發射極電壓 VCEO 最大值：: 50 V

連續集電極電流：: 0.1 A

峰值直流集電極電流：: 100 mA

Pd - 功耗：: 357 mW

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: NSBC114YDXV6

打包：: 捲軸

直流電流增益 hFE 最大值：: 80

高度：: 0.55 mm

長度：: 1.6 mm

寬度：: 1.2 mm

品牌：: 安森美半導體

產品類別：: BJT - 雙極晶體管 - 預偏置

出廠包裝數量：: 8000

子類別：: 晶體管

單位重量：: 0.000106 oz

Tags: NSBC114YDX, NSBC114YD, NSBC114Y, NSBC114, NSBC11, NSBC, NSB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSBC114YDXV6T5G 描述

***ical: Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***emi: Dual NPN Bipolar Digital Transistor (BRT)

***ark: Brt Transistor, 50V, 47K/10Kohm, Sot-563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes

***ical: Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital

***emi: Complementary Bipolar Digital Transistor (BRT)

***ment14 APAC: Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous

***ark: Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes

***nell: TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***th Star Micro: The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.

***ical: Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ponent Stockers USA: 100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

***enic: 1 PCS NPN1 PCS PNP - Pre-Biased(Dual) 500mW 100mA 50V SOT-563 Digital Transistors ROHS

***emi: Complementary Bipolar Digital Transistor (BRT)

***ment14 APAC: TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6

***ure Electronics: NSBC114 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-563

***ark: Brt Transistor, 50V, 47K/10Kohm, Sot-563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes

***nell: TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 4.7(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins

***ical: Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***emi: Complementary Bipolar Digital Transistor (BRT)

***ark: Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
NSBC114YDXV6T5G DISTI # NSBC114YDXV6T5G-ND	ON Semiconductor	TRANS 2NPN PREBIAS 0.5W SOT563 RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR)	Temporarily Out of Stock	8000:$0.0977
NSBC114YDXV6T5G DISTI # NSBC114YDXV6T5G	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC114YDXV6T5G) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0	8000:$0.0779 16000:$0.0769 32000:$0.0759 48000:$0.0749 80000:$0.0739
NSBC114YDXV6T5G DISTI # NSBC114YDXV6T5G	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R (Alt: NSBC114YDXV6T5G) RoHS: Compliant Min Qty: 8000 Container: Tape and Reel	Europe - 0	8000:€0.1519 16000:€0.1179 32000:€0.0959 48000:€0.0809 80000:€0.0759
NSBC114YDXV6T5G DISTI # 42K2328	ON Semiconductor	BRT TRANSISTOR, 50V, 47K/10KOHM, SOT-563,Digital Transistor Polarity:Dual NPN,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes	0	1:$0.1200
NSBC114YDXV6T5G	ON Semiconductor	RoHS: Not Compliant	88000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
NSBC114YDXV6T1G DISTI # 863-NSBC114YDXV6T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN RoHS: Compliant	17649	1:$0.3900 10:$0.2510 100:$0.1080 1000:$0.0830 4000:$0.0630 8000:$0.0560 24000:$0.0530
NSBC114YDXV6T5G DISTI # 863-NSBC114YDXV6T5G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN RoHS: Compliant	7771	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 2500:$0.0930 8000:$0.0870 24000:$0.0800 48000:$0.0770 96000:$0.0740

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