CSD17307Q5A

Mfr. #:: CSD17307Q5A
描述:: Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R
生命週期:: 製造商新產品
數據表:: CSD17307Q5A 數據表
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更多信息:: CSD17307Q5A 更多信息 CSD17307Q5A Product Details

產品屬性
屬性值

製造商: 德州儀器

產品分類: FET - 單

系列: 場效應管

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

商品名: 場效應管

包裝盒: 8-PowerTDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-VSON (5x6)

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 3W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 700pF @ 15V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 14A (Ta), 73A (Tc)

Rds-On-Max-Id-Vgs: 10.5 mOhm @ 11A, 8V

Vgs-th-Max-Id: 1.8V @ 250μA

柵極電荷-Qg-Vgs: 5.2nC @ 4.5V

鈀功耗: 3 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

VGS-柵極-源極-電壓: 10 V

Id 連續漏極電流: 14 A

Vds-漏-源-擊穿電壓: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.3 V

Rds-On-Drain-Source-Resistance: 12.1 mOhms

晶體管極性: N通道

典型關斷延遲時間: 9.3 ns

典型開啟延遲時間: 4.6 ns

Qg-門電荷: 4 nC

正向跨導最小值: 66 S

Tags: CSD1730, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17307Q5A 描述

***Components: In a Pack of 10, N-Channel MOSFET, 73 A, 30 V, 8-Pin SON Texas Instruments CSD17307Q5A

***as Instruments: 30V, N ch NexFET MOSFET™, single SON5x6, 12.1mOhm 8-VSONP -55 to 150

***ical: Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R

***p One Stop Global: Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R

***ark: N CHANNEL, TRANSISTOR, 30V, 73A, SON

*** Source Electronics: MOSFET N-CH 30V 73A 8SON

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

***ment14 APAC: MOSFET, N CH, 30V, 73A, 8SON; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:8V; Power Dissipation Pd:3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:73A; Power Dissipation Pd:3W; Voltage Vgs Max:10V

***nell: MOSFET, N CH, 30V, 73A, 8SON; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:73A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.0084ohm; Napięcie Vgs pomiaru Rds(on):8V; Napięcie progowe Vgs:1.3V; Straty mocy Pd:3W; Rodzaj obudowy tranzystora:SON; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:73A; Napięcie Vgs, maks.:10V; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +150°C

CSD17307Q5A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD17307Q5A DISTI # V39:1801_07248760	Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R RoHS: Compliant	2500	2500:$0.3059
CSD17307Q5A DISTI # 296-25857-1-ND	MOSFET N-CH 30V 73A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	37740In Stock	1000:$0.3589 500:$0.4487 100:$0.6057 10:$0.7850 1:$0.9000
CSD17307Q5A DISTI # 296-25857-6-ND	MOSFET N-CH 30V 73A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	37740In Stock	1000:$0.3589 500:$0.4487 100:$0.6057 10:$0.7850 1:$0.9000
CSD17307Q5A DISTI # 296-25857-2-ND	MOSFET N-CH 30V 73A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	32500In Stock	12500:$0.2831 5000:$0.2940 2500:$0.3158
CSD17307Q5A DISTI # 31084010	Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R RoHS: Compliant	2500	2500:$0.3059
CSD17307Q5A DISTI # CSD17307Q5A	Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R (Alt: CSD17307Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17307Q5A DISTI # CSD17307Q5A	Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17307Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2869 5000:$0.2729 10000:$0.2639 15000:$0.2549 25000:$0.2479
CSD17307Q5A	30V N Channel NexFET&#153,Power MOSFET	6561	1000:$0.2300 750:$0.2500 500:$0.3200 250:$0.3900 100:$0.4200 25:$0.4900 10:$0.5300 1:$0.5900
CSD17307Q5A	Power Field-Effect Transistor, 73A I(D), 30V, 0.0173ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	767990	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
CSD17307Q5A DISTI # 595-CSD17307Q5A	MOSFET 30V N Channel NexFET Power MOSFET RoHS: Compliant	84	1:$0.7400 10:$0.6140 100:$0.3960 1000:$0.3170 2500:$0.2880
CSD17307Q5A		89
CSD17307Q5A DISTI # 8274833P	MOSFET N-CHANNEL 30V 14A NEXFET SON8EP, RL	2500	50:£0.3660 200:£0.2870 500:£0.2810

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