MJE15034G

Mfr. #:: MJE15034G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 4A 350V 50W NPN
生命週期:: 製造商新產品
數據表:: MJE15034G 數據表
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HTML Datasheet:: MJE15034G Datasheet MJE15034G Datasheet (P4-P5)
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產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-220-3

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 350 V

集電極-基極電壓 VCBO：: 350 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 0.5 V

最大直流集電極電流：: 4 A

增益帶寬積 fT：: 30 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

系列：: MJE15034

高度：: 15.75 mm

長度：: 10.53 mm

打包：: 管子

寬度：: 4.83 mm

品牌：: 安森美半導體

連續集電極電流：: 4 A

Pd - 功耗：: 50 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 50

子類別：: 晶體管

單位重量：: 0.211644 oz

Tags: MJE15034G, MJE15034, MJE1503, MJE15, MJE1, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE15034G 描述

***th Star Micro: Transistor GP BJT NPN 350V 4A 3-Pin (3+Tab) TO-220AB Rail

***enic: 350V 2W 4A NPN TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***ure Electronics: MJE Series 350 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-220AB

***emi: Bipolar Transistor, NPN, 350 V, 4.0 A

*** Stop Electro: Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ment14 APAC: BIPOLAR Transistor, NPN, 350V; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition

***trelec: Power Transistor, TO-220, NPN, 350V

***nell: TRANSISTOR, NPN, 350V, 4A, TO220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 50W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor

***ark: BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:4A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes

***ark: Transistor,Bjt,Npn,400V V(Br)Ceo,5A I(C),To-220Ab Rohs Compliant: Yes

***ure Electronics: KSC5305D Series 400 V 5 A Surface Mount NPN Silicon Transistor - TO-220-3

***r Electronics: Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***el Electronic: Bipolar Transistors - BJT NPN Sil Transistor

***et Europe: Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220AB Rail

***ical: Trans GP BJT NPN 400V 5A 75000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ure Electronics: BUL Series 400 V 5 A High Speed High Gain NPN Power Transistor TO-220AB

***enic: 400V 75W 5A 10@2A1V 13MHz 320mV@2A400mA NPN -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***ponent Stockers USA: 5 A 400 V NPN Si POWER TRANSISTOR TO-220AB

***th Star Micro: The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore there is no need to guarantee an hFE window.

***nell: TRANSISTOR, NPN, 400V, 5A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 13MHz; Power Dissipation Pd: 75W; DC Collector Current: 5A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)

***ure Electronics: KSC Series NPN 75 W 450 V 5 A Flange Mount Power Transistor - TO-220-3

***ark: Transistor,bjt,npn,450V V(Br)Ceo,5A I(C),to-220Ab Rohs Compliant: Yes

***ical: Trans GP BJT NPN 450V 5A 75000mW 3-Pin(3+Tab) TO-220 Bag

***r Electronics: Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***emi: NPN Triple Diffused Planar Silicon Transistor

***et Europe: Trans GP BJT NPN 425V 4A 3-Pin(3+Tab) TO-220AB Tube

***S: French Electronic Distributor since 1988

***i-Key Marketplace: NOW WEEN - BUJD203A - POWER BIPO

***et: Trans GP BJT NPN 450V 4A 3-Pin TO-220AB Tube

***des Inc SCT: NPN, 700V, 4A, TO220AB, 75W

***i-Key: TRANS NPN 450V 4A

***ure Electronics: PHE Series NPN 75 W 400 V 4 A Flange Mount Power Transistor - TO-220-3

***ical: Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Tube

***Parts: Transistor NPN, TO-220AB 400V 4AThrough Hole

***ponent Stockers USA: 4 A 400 V NPN Si POWER TRANSISTOR TO-220AB

Market price

型號	製造商	描述	庫存	價格
MJE15034G DISTI # V99:2348_07301771	ON Semiconductor	Trans GP BJT NPN 350V 4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1175	10000:$0.4872 2500:$0.4951 1000:$0.5538 500:$0.6928 100:$0.7702 10:$0.9521 1:$1.0845
MJE15034G DISTI # MJE15034GOS-ND	ON Semiconductor	TRANS NPN 350V 4A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	1227In Stock	1000:$0.6284 500:$0.7960 100:$0.9636 50:$1.1730 1:$1.3800
MJE15034G DISTI # 31035750	ON Semiconductor	Trans GP BJT NPN 350V 4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1175	12:$1.0845
MJE15034G DISTI # MJE15034G	ON Semiconductor	Trans GP BJT NPN 350V 4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE15034G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 6404	1:$0.5209 10:$0.5179 25:$0.5139 50:$0.5109 100:$0.5049 500:$0.4979 1000:$0.4919
MJE15034G DISTI # MJE15034G	ON Semiconductor	Trans GP BJT NPN 350V 4A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE15034G) RoHS: Compliant Min Qty: 800	Asia - 0	800:$1.1143 1600:$1.0715 2400:$1.0318 4000:$0.9950 8000:$0.9607 20000:$0.9286 40000:$0.9134
MJE15034G DISTI # 26K4452	ON Semiconductor	Trans GP BJT NPN 350V 4A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 26K4452) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$1.3500 10:$1.1600 100:$0.8980 500:$0.7990 1000:$0.6390 2500:$0.5710 10000:$0.5510
MJE15034G DISTI # 26K4452	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 350V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:30MHz,Power Dissipation Pd:50W,DC Collector Current:8A,DC Current Gain hFE:100hFE,No. of Pins:3Pins,MSL:- , RoHS Compliant: Yes	0	1:$1.3500 10:$1.1600 100:$0.8980 500:$0.7990 1000:$0.6390 2500:$0.5710 10000:$0.5510
MJE15034G	ON Semiconductor	RoHS: Not Compliant	84	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.8000
MJE15034G DISTI # 863-MJE15034G	ON Semiconductor	Bipolar Transistors - BJT 4A 350V 50W NPN RoHS: Compliant	1540	1:$1.3100 10:$1.1200 100:$0.8580 500:$0.7590 1000:$0.5990 2500:$0.5310 10000:$0.5110
MJE15034 DISTI # 863-MJE15034	ON Semiconductor	Bipolar Transistors - BJT 4A 350V 50W NPN RoHS: Not compliant	0
MJE15034G DISTI # 2101379	ON Semiconductor	TRANSISTOR, NPN, 350V, 4A, TO220 RoHS: Compliant	631	5:£1.2000 25:£1.0800 100:£0.8270
MJE15034G DISTI # 2101379	ON Semiconductor	TRANSISTOR, NPN, 350V, 4A, TO220 RoHS: Compliant	706	1:$2.0700 10:$1.7800 100:$1.3600
MJE15034G. DISTI # 1364071	ON Semiconductor	RoHS: Compliant	262	1:$0.8040

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