FGH75N60UFTU

Mfr. #:: FGH75N60UFTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors N-CH / 600V 75A FS Planar
生命週期:: 製造商新產品
數據表:: FGH75N60UFTU 數據表
交貨:: DHL FedEx Ups TNT EMS
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更多信息:: FGH75N60UFTU 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247AB-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

最大柵極發射極電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: FGH75N60UF

打包：: 管子

連續集電極電流 Ic 最大值：: 150 A

高度：: 20.6 mm

長度：: 15.6 mm

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 450

子類別：: IGBT

單位重量：: 0.225401 oz

Tags: FGH75N60UFT, FGH75N60U, FGH75N60, FGH75N, FGH7, FGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGH75N60UFTU 描述

***ical: Trans IGBT Chip N-CH 600V 150A 452000mW 3-Pin(3+Tab) TO-247AB Rail

***el Electronic: FAIRCHILD SEMICONDUCTOR FGH75N60UFTU IGBT Single Transistor, General Purpose, 150 A, 600 V, 452 W, 600 V, TO-247AB, 3 Pins

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,600V,150A,TO247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:452W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:452W

***ical: Trans IGBT Chip N=-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247AB Tube

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:378W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:378W

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***-Wing Technology: FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***ical: Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247

***i-Key: IGBT 600V 110A 446W TO247

***th Star Micro: Insulated Gate Bipolar Transistor - NPT Standard Speed

***hardson RFPD: POWER IGBT TRANSISTOR

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***et: Trans IGBT Chip N-CH 600V 140A 3-Pin TO-247 Tube

***ark: Igbt, Single, 600V, 140A, To-247; Dc Collector Current:140A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:714W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: High speed 600 V, 100 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 600V 110A 284000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, TO-247

***icroelectronics: 60 A, 600 V, very low drop IGBT

*** Electronic Components: IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

FGH75N60UFTU 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Market price

型號	製造商	描述	庫存	價格
FGH75N60UFTU DISTI # V36:1790_06359250	ON Semiconductor	N-CH / 600V 75A FS PLANAR IGBT	0
FGH75N60UFTU DISTI # V99:2348_06359250	ON Semiconductor	N-CH / 600V 75A FS PLANAR IGBT	0
FGH75N60UFTU DISTI # FGH75N60UFTU-ND	ON Semiconductor	IGBT 600V 150A 452W TO247 RoHS: Compliant Min Qty: 450 Container: Tube	Temporarily Out of Stock	450:$5.3231
FGH75N60UFTU DISTI # 26942082	ON Semiconductor	N-CH / 600V 75A FS PLANAR IGBT	1800	450:$4.9215
FGH75N60UFTU DISTI # 32425583	ON Semiconductor	N-CH / 600V 75A FS PLANAR IGBT	450	450:$5.7344
FGH75N60UFTU DISTI # FGH75N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH75N60UFTU) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$3.7111 900:$3.6870 1800:$3.6397 2700:$3.5937 4500:$3.5049
FGH75N60UFTU DISTI # FGH75N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH75N60UFTU) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.1900 10:€3.8900 25:€3.7900 50:€3.6900 100:€3.5900 500:€3.4900 1000:€3.4900
FGH75N60UFTU DISTI # 41T0518	ON Semiconductor	IGBT,N CHANNEL,FAST,600V,150A,TO247,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:452W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°CRoHS Compliant: Yes	0	250:$5.2700 100:$5.5100 50:$5.9100 25:$6.3000 10:$6.5900 1:$7.2600
FGH75N60UFTU. DISTI # 29AC6334	Fairchild Semiconductor Corporation	FSPIGBT TO247 75A 600V ROHS COMPLIANT: YES	0	4500:$3.5100 2700:$3.6000 1800:$3.6400 900:$3.6900 1:$3.7200
FGH75N60UFTU	ON Semiconductor	FGH75N60 Series 600 V 75 A 27 ns Through Hole Field Stop IGBT - TO-247-3 RoHS: Compliant	465Tube	5:$5.1200 25:$4.3700 100:$4.0800
FGH75N60UFTU DISTI # 512-FGH75N60UFTU	ON Semiconductor	IGBT Transistors N-CH / 600V 75A FS Planar RoHS: Compliant	99	1:$6.7600 10:$6.1100 25:$5.8300 100:$5.0600 250:$4.8300 500:$4.4100
FGH75N60UFTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	Europe - 60
FGH75N60UFTU DISTI # 1885739	ON Semiconductor	IGBT,N CH,FAST,600V,150A,TO247 RoHS: Compliant	0	100:£3.9800 50:£4.2800 10:£4.5800 5:£5.3000 1:£5.8300
FGH75N60UFTU DISTI # 1885739	ON Semiconductor	IGBT,N CH,FAST,600V,150A,TO247 RoHS: Compliant	0	500:$6.6500 250:$7.2800 100:$7.6300 25:$8.7900 10:$9.2100 1:$10.1900

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