SSM6N61NU,LF

Mfr. #:: SSM6N61NU,LF
製造商:: Toshiba
描述:: MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A
生命週期:: 製造商新產品
數據表:: SSM6N61NU,LF 數據表
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HTML Datasheet:: SSM6N61NU,LF Datasheet SSM6N61NU,LF Datasheet (P4-P6)SSM6N61NU,LF Datasheet (P7-P8)
ECAD Model:
更多信息:: SSM6N61NU,LF 更多信息

產品屬性
屬性值

製造商：: 東芝

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: UDFN-6

通道數：: 2 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 20 V

Id - 連續漏極電流：: 4 A

Rds On - 漏源電阻：: 108 mOhms

Vgs th - 柵源閾值電壓：: 400 mV

Vgs - 柵源電壓：: 8 V

Qg - 門電荷：: 3.6 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2 W

配置：: 雙重的

頻道模式：: 增強

打包：: 捲軸

高度：: 0.75 mm

長度：: 2 mm

產品：: MOSFET

系列：: SSM6N61

晶體管類型：: 2 N-Channel

類型：: 矽 N 溝道 MOS

寬度：: 2 mm

品牌：: 東芝

正向跨導 - 最小值：: 12 S

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 45 ns

典型的開啟延遲時間：: 25 ns

Tags: SSM6N6, SSM6N, SSM6, SSM

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM6N61NU,LF 描述

***et: Pb-F Small-signal MOSFET 2 in 1 Nch ID: 4A

***i-Key: MOSFET 2N-CH 20V 4A UDFN

***: 2-IN-1 MOSFETS LOAD/SWTCH

SSM6N61NU,LF 更多信息

U-MOS VI Small Signal MOSFETs: Toshiba U-MOS VI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. Offered in single, dual, n-channel, p-channel and various voltage versions, they offer a wide variety of options for the design engineer. Each address the need to support high-current charging with low voltage and low RDS(on) requirements. These compact packages and and low voltage operation make them ideal solutions for high-density packaging requirements in smart phones and game consoles.

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