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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| MRFE6VP5150NR1 DISTI # V72:2272_07204225 | NXP Semiconductors | Trans RF MOSFET N-CH 133V 5-Pin TO-270 W T/R | 389 |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1CT-ND | NXP Semiconductors | FET RF 2CH 133V 230MHZ TO-270 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 86In Stock |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1DKR-ND | NXP Semiconductors | FET RF 2CH 133V 230MHZ TO-270 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 86In Stock |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1TR-ND | NXP Semiconductors | FET RF 2CH 133V 230MHZ TO-270 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| MRFE6VP5150NR1 DISTI # 30345606 | NXP Semiconductors | Trans RF MOSFET N-CH 133V 5-Pin TO-270 W T/R | 389 |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1 | Avnet, Inc. | Trans MOSFET N-CH 133V 4-Pin TO-270 WB T/R (Alt: MRFE6VP5150NR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel | Europe - 410 |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1 | Avnet, Inc. | Trans MOSFET N-CH 133V 4-Pin TO-270 WB T/R - Tape and Reel (Alt: MRFE6VP5150NR1) RoHS: Compliant Min Qty: 500 Container: Reel | Americas - 0 |
|
| MRFE6VP5150NR1 DISTI # 31AC6671 | NXP Semiconductors | TRANSISTOR, RF, 133V, TO-270WB-4,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:952W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes | 526 |
|
| MRFE6VP5150NR1 DISTI # 841-MRFE6VP5150NR1 | NXP Semiconductors | RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V RoHS: Compliant | 757 |
|
| MRFE6VP5150NR1 | Freescale Semiconductor | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 RoHS: Compliant | 53 |
|
| MRFE6VP5150NR1 DISTI # MRFE6VP5150NR1 | NXP Semiconductors | RF POWER TRANSISTOR RoHS: Compliant | 232 |
|
| MRFE6VP5150NR1 DISTI # C1S537101525919 | NXP Semiconductors | MOSFETs RoHS: Compliant | 389 |
|
| MRFE6VP5150NR1 DISTI # 2776263 | NXP Semiconductors | TRANSISTOR, RF, 133V, TO-270WB-4 RoHS: Compliant | 1026 |
|
| MRFE6VP5150NR1 DISTI # XSKDRABS0013612 | NXP Semiconductors | RoHS: Compliant | 500 |
|
| MRFE6VP5150NR1 DISTI # 2776263 | NXP Semiconductors | TRANSISTOR, RF, 133V, TO-270WB-4 RoHS: Compliant | 526 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: TLV521DCKT OMO.#: OMO-TLV521DCKT |
Operational Amplifiers - Op Amps NANOPOWER 1.8V RRIO CMOS INPUT OPERA |
|
Mfr.#: LM4040D25IDBZR OMO.#: OMO-LM4040D25IDBZR |
Voltage References 2.5V Precision Mcrpwr Shunt 1% acc |
|
Mfr.#: MRF101AN OMO.#: OMO-MRF101AN |
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
|
|
Mfr.#: MRF101BN OMO.#: OMO-MRF101BN |
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
|
Mfr.#: MRF300BN OMO.#: OMO-MRF300BN |
RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V |
|
Mfr.#: EYSHCNZXZ OMO.#: OMO-EYSHCNZXZ |
Bluetooth Modules (802.15.1) BT4.2 9.6x12.9x2mm Chip:Nordic nRF52832 |
|
Mfr.#: GRM188R60J226MEA0D |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 22uF 6.3volts X5R + - 20% |
|
Mfr.#: TLV521DCKT |
Operational Amplifiers - Op Amps TLV521 350nA Nanopower, Single, RRIO, CMOS Input, Cost-Optimized Operational Amplifier 5-SC70 -40 to 125 |
|
Mfr.#: MRF101AN |
RF TRANSISTOR 100W TO-220 |
|
Mfr.#: LM4040D25IDBZR |
Voltage References 2.5V Precision Mcrpwr Shunt 1% acc |
