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STGW15M120DF3

STGW15M120DF3
Mfr. #:
STGW15M120DF3
製造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
生命週期:
製造商新產品
數據表:
STGW15M120DF3 數據表
交貨:
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ECAD Model:
更多信息:
STGW15M120DF3 更多信息 STGW15M120DF3 Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1200 V
集電極-發射極飽和電壓：
1.85 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
30 A
Pd - 功耗：
283 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
系列：
STGW15M120DF3
打包：
管子
品牌：
意法半導體
柵極-發射極漏電流：
250 nA
產品類別：
IGBT晶體管
出廠包裝數量：
600
子類別：
IGBT
單位重量：
1.340411 oz
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ark
Igbt Single Transistor, 30 A, 1.85 V, 259 W, 1.2 Kv, To-247, 3
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***p One Stop
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 15 A low drop
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
***i-Key
IGBT H-SERIES 1200V 15A TO-247
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Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1.2KV, 30A, 175DEG C, 333W; Available until stocks are exhausted
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***(Formerly Allied Electronics)
MOSFET; 1200V; 30.000A; COPAK-247
***ment14 APAC
IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / G8, 1200V, 15A, COPAK-247AC
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STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
型號 製造商 描述 庫存 價格
STGW15M120DF3
DISTI # 497-15057-5-ND		STMicroelectronicsIGBT 1200V 30A 259W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.0890
STGW15M120DF3
DISTI # STGW15M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$4.0900
  • 1200:$3.9900
  • 2400:$3.7900
  • 3600:$3.5900
  • 6000:$3.4900
STGW15M120DF3
DISTI # STGW15M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 30:€3.0700
STGW15M120DF3
DISTI # 26Y5812		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$3.5000
STGW15M120DF3
DISTI # 511-STGW15M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
RoHS: Compliant		0
  • 1:$6.6600
  • 10:$6.0200
  • 25:$5.7400
  • 100:$4.9800
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
STGW15M120DF3STMicroelectronicsInsulated Gate Bipolar Transistor
RoHS: Compliant		Europe - 600
    STGW15M120DF3
    DISTI # STGW15M120DF3    		STMicroelectronics1200V 30A 259W TO247
    RoHS: Not Compliant    		50
    • 5:€4.1200
    • 30:€3.7200
    • 120:€3.5200
    • 300:€3.3900
    STGW15M120DF3
    DISTI # IGBT1558    		STMicroelectronicsIGBT 1200V 15A 1,85VTO-247Stock DE - 5Stock HK - 0Stock US - 0
    • 30:$4.8200
    • 60:$4.5100
    • 90:$4.4400
    • 150:$4.3700
    • 210:$4.1100
    STGW15M120DF3
    DISTI # 2470024    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant    		0
    • 2500:$5.4900
    • 1000:$5.7000
    • 500:$6.5400
    • 250:$7.1700
    • 100:$7.5000
    • 25:$8.6500
    • 10:$9.0700
    • 1:$10.0400
    STGW15M120DF3
    DISTI # 2470024    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant    		0
    • 100:£3.8100
    • 50:£4.1000
    • 10:£4.3900
    • 5:£5.0800
    • 1:£5.5800
    圖片 型號 描述
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3

    		 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15S120DF3

    Mfr.#: STGW15S120DF3

    OMO.#: OMO-STGW15S120DF3

    		 IGBT Transistors IGBT & Power Bipolar
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

    		 IGBT H-SERIES 1200V 15A TO-247
    可用性
    庫存:
    100
    訂購:
    2083
    輸入數量:
    STGW15M120DF3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.66
    US$6.66
    10
    US$6.02
    US$60.20
    25
    US$5.74
    US$143.50
    100
    US$4.98
    US$498.00
    250
    US$4.76
    US$1 190.00
    500
    US$4.34
    US$2 170.00
    1000
    US$3.78
    US$3 780.00
    2500
    US$3.64
    US$9 100.00
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