CSD86336Q3DT

Mfr. #:: CSD86336Q3DT
描述:: MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON3x3 PowerBlock, 20A 8-VSON-CLIP -55 to 150
生命週期:: 製造商新產品
數據表:: CSD86336Q3DT 數據表
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更多信息:: CSD86336Q3DT 更多信息 CSD86336Q3DT Product Details

產品屬性
屬性值

製造商：: 德州儀器

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: VSON-CLIP-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 25 V

Id - 連續漏極電流：: 20 A

Rds On - 漏源電阻：: 9.1 mOhms

Vgs th - 柵源閾值電壓：: 1.1 V

Vgs - 柵源電壓：: 8 V

Qg - 門電荷：: 3.8 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 6 W

配置：: 單身的

頻道模式：: 增強

商品名：: 場效應管

打包：: 捲軸

系列：: CSD86336Q3D

晶體管類型：: 功率MOSFET

品牌：: 德州儀器

正向跨導 - 最小值：: 40 S

秋季時間：: 2 ns

產品類別：: MOSFET

上升時間：: 10 ns

出廠包裝數量：: 250

子類別：: MOSFET

典型關斷延遲時間：: 7 ns

典型的開啟延遲時間：: 5 ns

Tags: CSD8633, CSD86, CSD8, CSD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD86336Q3DT 更多信息

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Power Block TI NexFET

NexFET Power Block ICs: OMO Electronic NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs which improves power density. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size, by up to 1/2, for the output filter (caps & inductor). They come with a unique ground pad lead frame and pinout which simplifies the customers layout and improves operating and thermal performance.

Market price

型號	描述	庫存	價格
CSD86336Q3DT DISTI # V72:2272_21657002	25V POWERBLOCK N CH MOSFET	500	500:$1.0436 250:$1.1496 100:$1.1951 25:$1.3502 10:$1.5003 1:$1.9413
CSD86336Q3DT DISTI # V39:1801_21657002	25V POWERBLOCK N CH MOSFET	0
CSD86336Q3DT DISTI # 296-49054-2-ND	SYNCHRONOUS BUCK NEXFET POWER BL RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	500In Stock	1250:$0.8743 750:$0.9527 500:$1.0553 250:$1.2060
CSD86336Q3DT DISTI # 296-49054-1-ND	SYNCHRONOUS BUCK NEXFET POWER BL RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	500In Stock	100:$1.3975 10:$1.7390 1:$1.9300
CSD86336Q3DT DISTI # 296-49054-6-ND	SYNCHRONOUS BUCK NEXFET POWER BL RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	500In Stock	100:$1.3975 10:$1.7390 1:$1.9300
CSD86336Q3DT DISTI # 29057087	25V POWERBLOCK N CH MOSFET	500	500:$1.1252 250:$1.2392 100:$1.2953 25:$1.4515 10:$1.6128 9:$2.0869
CSD86336Q3DT DISTI # CSD86336Q3DT	Conv DC-DC Single Step Down 22V 8-Pin VSON T/R - Tape and Reel (Alt: CSD86336Q3DT) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$0.7559 2500:$0.7779 1500:$0.8049 1000:$0.8319 500:$0.8749
CSD86336Q3D DISTI # 595-CSD86336Q3D	MOSFET 25V POWERBLOCK N CH MOSFET RoHS: Compliant	2500	1:$1.5400 10:$1.3100 100:$1.0400 500:$0.9170 1000:$0.7600 2500:$0.7080 5000:$0.6820 10000:$0.6550
CSD86336Q3DT DISTI # 595-CSD86336Q3DT	MOSFET 25V POWERBLOCK N CH MOSFET RoHS: Compliant	500	1:$1.7800 10:$1.5100 100:$1.2000 250:$1.2000 500:$1.0500 1000:$0.8750 2500:$0.8150 5000:$0.7840 10000:$0.7540
CSD86336Q3DT DISTI # 2860282	MOSFET, DUAL N-CH, 25V, VSON	500	500:£0.7290 250:£0.8230 100:£0.9160 25:£1.1500 5:£1.2600
CSD86336Q3DT DISTI # 2860282	MOSFET, DUAL N-CH, 25V, VSON RoHS: Compliant	500	100:$2.1500 10:$2.6700 1:$2.9500

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