TC58NYG0S3HBAI6

TC58NYG0S3HBAI6
Mfr. #:
TC58NYG0S3HBAI6
製造商:
Toshiba Memory
描述:
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
生命週期:
製造商新產品
數據表:
TC58NYG0S3HBAI6 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TC58NYG0S3HBAI6 更多信息
產品屬性
屬性值
製造商:
東芝
產品分類:
NAND閃存
RoHS:
Y
安裝方式:
貼片/貼片
包裝/案例:
VFBGA-67
內存大小:
1 Gbit
接口類型:
平行線
組織:
128 M x 8
數據總線寬度:
8 bit
電源電壓 - 最小值:
1.7 V
電源電壓 - 最大值:
1.95 V
電源電流 - 最大值:
30 mA
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
打包:
托盤
內存類型:
NAND
品牌:
東芝內存
最大時鐘頻率:
-
濕氣敏感:
是的
產品類別:
NAND閃存
出廠包裝數量:
338
子類別:
內存和數據存儲
Tags
TC58NYG0, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***akorn
NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 1GBIT 25NS 67VFBGA
***et
1Gbit, generation: 24nm, VCC=1.7 to 1.95V
***S
vpe: 253/tray/bga
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
型號 製造商 描述 庫存 價格
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$2.8107
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6
Toshiba America Electronic Components1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 338:$2.1900
  • 676:$2.1900
  • 1352:$2.0900
  • 2028:$2.0900
  • 3380:$2.0900
TC58NYG0S3HBAI6
DISTI # 757-TC58NYG0S3HBAI6
Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
338
  • 1:$3.0600
  • 10:$2.7500
  • 50:$2.7000
  • 100:$2.4100
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
  • 2500:$2.1300
圖片 型號 描述
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6

NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58NYG1S3HBAI4_TRAY

Mfr.#: TC58NYG1S3HBAI4_TRAY

OMO.#: OMO-TC58NYG1S3HBAI4-TRAY-1190

全新原裝
TC58NYG1S8HBAI6JD2

Mfr.#: TC58NYG1S8HBAI6JD2

OMO.#: OMO-TC58NYG1S8HBAI6JD2-1190

全新原裝
TC58NYG2S0FBAI4

Mfr.#: TC58NYG2S0FBAI4

OMO.#: OMO-TC58NYG2S0FBAI4-1190

全新原裝
TC58NYG2S3ETAI0B3H

Mfr.#: TC58NYG2S3ETAI0B3H

OMO.#: OMO-TC58NYG2S3ETAI0B3H-1190

全新原裝
TC58NYG3S0FBAID

Mfr.#: TC58NYG3S0FBAID

OMO.#: OMO-TC58NYG3S0FBAID-1190

全新原裝
TC58NYG1S3HBAI6

Mfr.#: TC58NYG1S3HBAI6

OMO.#: OMO-TC58NYG1S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG2S0HBAI4

Mfr.#: TC58NYG2S0HBAI4

OMO.#: OMO-TC58NYG2S0HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 4Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3HBAI6-ND

Mfr.#: TC58NYG1S3HBAI6-ND

OMO.#: OMO-TC58NYG1S3HBAI6-ND-1190

全新原裝
可用性
庫存:
338
訂購:
2321
輸入數量:
TC58NYG0S3HBAI6的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.77
US$2.77
10
US$2.49
US$24.90
25
US$2.45
US$61.25
50
US$2.44
US$122.00
100
US$2.18
US$218.00
250
US$2.11
US$527.50
500
US$2.10
US$1 050.00
1000
US$1.96
US$1 960.00
2500
US$1.87
US$4 675.00
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