NSBC113EPDXV6T1G

NSBC113EPDXV6T1G
Mfr. #:
NSBC113EPDXV6T1G
製造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
生命週期:
製造商新產品
數據表:
NSBC113EPDXV6T1G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
雙極晶體管 - 預偏置
RoHS:
Y
配置:
雙重的
晶體管極性:
NPN
典型輸入電阻:
1 kOhms
典型電阻比:
1
安裝方式:
貼片/貼片
包裝/案例:
SOT-563-6
DC 集電極/基極增益 hfe 最小值:
3
集電極-發射極電壓 VCEO 最大值:
50 V
連續集電極電流:
100 mA
峰值直流集電極電流:
100 mA
Pd - 功耗:
357 mW
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
系列:
NSBC113EPDXV6
打包:
捲軸
直流電流增益 hFE 最大值:
3
高度:
0.55 mm
長度:
1.6 mm
寬度:
1.2 mm
品牌:
安森美半導體
產品類別:
BJT - 雙極晶體管 - 預偏置
出廠包裝數量:
4000
子類別:
晶體管
單位重量:
0.000106 oz
Tags
NSBC113, NSBC11, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ical
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***ure Electronics
NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***Yang
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
***nell
BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
型號 製造商 描述 庫存 價格
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSTR-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
4000In Stock
  • 4000:$0.1040
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSCT-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    NSBC113EPDXV6T1G
    DISTI # NSBC113EPDXV6T1GOSDKR-ND
    ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      NSBC113EPDXV6T1G
      DISTI # NSBC113EPDXV6T1G
      ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSBC113EPDXV6T1G)
      RoHS: Compliant
      Min Qty: 8000
      Container: Reel
      Americas - 0
      • 8000:$0.0779
      • 16000:$0.0769
      • 24000:$0.0759
      • 40000:$0.0749
      • 80000:$0.0739
      NSBC113EPDXV6T1G
      DISTI # 49X8950
      ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.4030
      • 25:$0.3090
      • 50:$0.2580
      • 100:$0.2160
      • 250:$0.1820
      • 500:$0.1550
      • 1000:$0.1260
      • 2500:$0.1070
      NSBC113EPDXV6T1G
      DISTI # 42K2317
      ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.1200
      NSBC113EPDXV6T1G
      DISTI # 863-NSBC113EPDXV6T1G
      ON SemiconductorBipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      RoHS: Compliant
      3800
      • 1:$0.3500
      • 10:$0.2660
      • 100:$0.1440
      • 1000:$0.1080
      • 4000:$0.0930
      • 8000:$0.0870
      • 24000:$0.0800
      • 48000:$0.0770
      • 100000:$0.0740
      NSBC113EPDXV6T1GON Semiconductor 
      RoHS: Not Compliant
      108000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      圖片 型號 描述
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G

      Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G

      Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G

      Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EDXV6T1

      Mfr.#: NSBC113EDXV6T1

      OMO.#: OMO-NSBC113EDXV6T1-ON-SEMICONDUCTOR

      TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EDXV6T5

      Mfr.#: NSBC113EDXV6T5

      OMO.#: OMO-NSBC113EDXV6T5-ON-SEMICONDUCTOR

      TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EPDXV6T1

      Mfr.#: NSBC113EPDXV6T1

      OMO.#: OMO-NSBC113EPDXV6T1-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN/PNP SOT563
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G-ON-SEMICONDUCTOR

      Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G-ON-SEMICONDUCTOR

      Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G-ON-SEMICONDUCTOR

      Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      可用性
      庫存:
      Available
      訂購:
      1986
      輸入數量:
      NSBC113EPDXV6T1G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.35
      US$0.35
      10
      US$0.27
      US$2.66
      100
      US$0.14
      US$14.40
      1000
      US$0.11
      US$108.00
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