SIS427EDN-T1-GE3

Name: Vishay - SIS427EDN-T1-GE3
Brand: Vishay
SKU: OMO-2938183
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIS427EDN-T1-GE3
製造商:: Vishay
描述:: RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
生命週期:: 製造商新產品
數據表:: SIS427EDN-T1-GE3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 威世

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

商品名: 溝槽場效應晶體管

包裝盒: PowerPAKR 1212-8

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: PowerPAKR 1212-8

配置: 單身的

FET型: MOSFET P 溝道，金屬氧化物

最大功率: 52W

晶體管型: 1 P-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 1930pF @ 15V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 50A (Tc)

Rds-On-Max-Id-Vgs: 10.6 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

柵極電荷-Qg-Vgs: 66nC @ 10V

鈀功耗: 52 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 12 ns

上升時間: 40 ns

VGS-柵極-源極-電壓: 25 V

Id 連續漏極電流: - 50 A

Vds-漏-源-擊穿電壓: - 30 V

VGS-th-Gate-Source-Threshold-Voltage: - 2.5 V

Rds-On-Drain-Source-Resistance: 17.7 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 28 ns

典型開啟延遲時間: 45 ns

Qg-門電荷: 43.5 nC

正向跨導最小值: 32 S

Tags: SIS42, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS427EDN-T1-GE3 描述

***et Europe: Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET, P CH, -30V, -50A, POWERPAK1212-8

***ark: N-CHANNEL 30-V (D-S) MOSFET

Market price

型號	製造商	描述	庫存	價格
SIS427EDN-T1-GE3 DISTI # V72:2272_09216167	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R RoHS: Compliant	303	250:$0.3636 100:$0.3675 25:$0.4569 10:$0.4622 1:$0.5479
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7895In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7895In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.2871
SIS427EDN-T1-GE3 DISTI # 27066163	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R RoHS: Compliant	303	250:$0.3636 100:$0.3675 28:$0.4569
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R (Alt: SIS427EDN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$3.4500 6000:$2.3793 9000:$1.7692 15000:$1.4375 30000:$1.3019 75000:$1.2546 150000:$1.2105
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS427EDN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2619 6000:$0.2539 12000:$0.2429 18000:$0.2369 30000:$0.2299
SIS427EDN-T1-GE3 DISTI # 99W9578	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	1:$0.3100 5000:$0.3030 10000:$0.2790 20000:$0.2610 30000:$0.2430 50000:$0.2330
SIS427EDN-T1-GE3 DISTI # 78-SIS427EDN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 RoHS: Compliant	3626	1:$0.7200 10:$0.5750 100:$0.4360 500:$0.3600 1000:$0.2880 3000:$0.2610
SIS427EDN-T1-GE3 DISTI # C1S803604990270	Vishay Intertechnologies	MOSFETs	303	250:$0.3636 100:$0.3675 25:$0.4569 10:$0.4622