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SIR812DP-T1-GE3

SIR812DP-T1-GE3
Mfr. #:
SIR812DP-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V 60A 104W 1.45mohm @ 10V
生命週期:
製造商新產品
數據表:
SIR812DP-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIR812DP-T1-GE3 DatasheetSIR812DP-T1-GE3 Datasheet (P4-P6)SIR812DP-T1-GE3 Datasheet (P7-P9)SIR812DP-T1-GE3 Datasheet (P10-P12)SIR812DP-T1-GE3 Datasheet (P13)
ECAD Model:
更多信息:
SIR812DP-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
E
技術：
矽
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
先生
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
第 # 部分別名：
SIR812DP-GE3
單位重量：
0.017870 oz
Tags
SIR81, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.Learn More
型號 製造商 描述 庫存 價格
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 48.9A 8-Pin PowerPAK SO T/R (Alt: SIR812DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIR812DP-T1-GE3
    DISTI # 99W9564    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.6960
    • 3000:$0.6910
    • 6000:$0.6580
    • 12000:$0.5830
    SIR812DP-T1-GE3
    DISTI # 04X9744    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$1.3600
    • 10:$1.3200
    • 100:$1.0400
    • 250:$0.9870
    • 500:$0.9220
    • 1000:$0.7380
    SIR812DP-T1-GE3
    DISTI # 78-SIR812DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant    		436
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8940
    • 1000:$0.7850
    • 3000:$0.7840
    SIR812DP-T1-GE3
    DISTI # 2283689    		Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
    RoHS: Compliant    		4
    • 5:£1.1300
    • 25:£1.0300
    • 100:£0.7870
    • 250:£0.7320
    • 500:£0.6760
    SIR812DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant    		Americas -
      SIR812DP-T1-GE3
      DISTI # 2283689      		Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
      RoHS: Compliant      		4
      • 1:$2.6200
      • 10:$2.1600
      • 100:$1.6500
      • 500:$1.4200
      • 1000:$1.2400
      • 3000:$1.2400
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      可用性
      庫存:
      Available
      訂購:
      5000
      輸入數量:
      SIR812DP-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.64
      US$1.64
      10
      US$1.35
      US$13.50
      100
      US$1.03
      US$103.00
      500
      US$0.89
      US$446.50
      1000
      US$0.70
      US$704.00
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