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FGB3040CS

FGB3040CS
Mfr. #:
FGB3040CS
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign
生命週期:
製造商新產品
數據表:
FGB3040CS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGB3040CS 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-263-6
安裝方式：
貼片/貼片
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
FGB3040CS
資質：
AEC-Q101
打包：
捲軸
工作溫度範圍：
- 40 C to + 175 C
品牌：
安森美半導體/飛兆半導體
產品類別：
IGBT晶體管
出廠包裝數量：
800
子類別：
IGBT
單位重量：
0.046279 oz
Tags
FGB3040C, FGB304, FGB30, FGB3, FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
IGBT, 430V, 19A, 1.6V, 300mJ, D2PAK, Current Sensing EcoSPARK® I, N-Channel Ignition
***ow.cn
Trans IGBT Chip N-CH 370V 21A 150000mW Automotive 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
FGB3040CS Series 430 V 21 A N-Channel Current Sensing Ignition IGBT - TO-263-6
***ark
Insulated-Gate Bibolar Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:430V; Continuous Collector Current, Ic:21A; Collector Emitter Saturation Voltage, Vce(sat):1.6V ;RoHS Compliant: Yes
***rchild Semiconductor
The FGB3040CS is an lgnition IGBT that offers outstand-ing SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage.
***ical
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263
***nell
IGBT, SINGLE, 600V, 40A, TO-263; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 170W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses, PG-TO263-3, RoHS
***ark
Igbt, 600V, 40A, 175Deg C, 170W; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:170W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IGB20N60H3ATMA1
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 T/R
***ineon SCT
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO263-3, RoHS
***ark
Igbt, Single, 1.2Kv, 6.2A, To-263-3; Dc Collector Current:6.2A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-263; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
***ical
Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
IGBT+ DIODE,600V,20A,TO263; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:166W
***ineon SCT
The 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***p One Stop
Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO263; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:333W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Automotive Solutions
ON Semiconductor Automotive Solutions deliver performance, fuel economy and emission levels for today's and the future's vehicles. ON Semiconductor has a 50-year legacy as a worldwide automotive semiconductor supplier with leading-edge IGBTs, MOSFETs, ignition IGBTs, injector drivers, gate drivers and power modules. These high-quality, power-efficient components are used in engine management, electric power assisted steering (EPAS), motor drives, traction inverters, chargers, DC-DC converters, PTC heaters and other systems. Learn More
型號 製造商 描述 庫存 價格
FGB3040CS
DISTI # V79:2366_18816026		ON SemiconductorES-1 SENSE-IGN-IGBT TO263608
  • 4800:$1.5570
  • 2400:$1.6150
  • 800:$1.6890
  • 500:$1.8770
  • 250:$2.1230
  • 100:$2.2230
  • 10:$2.4720
  • 1:$2.8330
FGB3040CS
DISTI # FGB3040CSCT-ND		ON SemiconductorIGBT 430V 21A 150W TO263-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		782In Stock
  • 100:$2.6522
  • 10:$3.2370
  • 1:$3.6000
FGB3040CS
DISTI # FGB3040CSDKR-ND		ON SemiconductorIGBT 430V 21A 150W TO263-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		782In Stock
  • 100:$2.6522
  • 10:$3.2370
  • 1:$3.6000
FGB3040CS
DISTI # FGB3040CSTR-ND		ON SemiconductorIGBT 430V 21A 150W TO263-6
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2400:$1.7606
  • 1600:$1.8487
  • 800:$2.1920
FGB3040CS
DISTI # 26122880		ON SemiconductorES-1 SENSE-IGN-IGBT TO263608
  • 500:$1.8770
  • 250:$2.1230
  • 100:$2.2230
  • 10:$2.4720
  • 4:$2.8330
FGB3040CS
DISTI # FGB3040CS		ON SemiconductorTrans IGBT Chip N-CH 370V 21A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: FGB3040CS)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
FGB3040CS
DISTI # 61M2360		ON SemiconductorInsulated-Gate Bibolar Transistor,DC Collector Current:21A,Collector Emitter Voltage Vces:430V,Power Dissipation Pd:150W,Collector Emitter Voltage V(br)ceo:430V,No. of Pins:6,Collector Emitter Saturation Voltage Vce(sat):1.6V , RoHS Compliant: Yes0
  • 1:$1.9300
  • 800:$1.9200
  • 2400:$1.7600
  • 9600:$1.7100
FGB3040CSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 21A I(C), 430V V(BR)CES, N-Channel
RoHS: Compliant		66264
  • 1000:$2.0600
  • 500:$2.1700
  • 100:$2.2600
  • 25:$2.3500
  • 1:$2.5300
FGB3040CS
DISTI # 512-FGB3040CS		ON SemiconductorIGBT Transistors IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign
RoHS: Compliant		840
  • 1:$3.3300
  • 10:$2.8300
  • 100:$2.4600
  • 250:$2.3300
  • 500:$2.0900
  • 800:$1.7700
  • 2400:$1.6800
  • 4800:$1.6100
FGB3040CSFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 680
    FGB3040CS
    DISTI # C1S541901396653    		ON SemiconductorTrans IGBT Chip N-CH 370V 21A 150000mW Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		608
    • 500:$1.8770
    • 100:$2.2230
    • 1:$2.8330
    圖片 型號 描述
    FGB30N6S2DT

    Mfr.#: FGB30N6S2DT

    OMO.#: OMO-FGB30N6S2DT

    		 Motor / Motion / Ignition Controllers & Drivers 600V N-Ch IGBT SMPS II Series
    FGB3040CS

    Mfr.#: FGB3040CS

    OMO.#: OMO-FGB3040CS-ON-SEMICONDUCTOR

    		 Motor / Motion / Ignition Controllers & Drivers IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign
    FGB3040ET

    Mfr.#: FGB3040ET

    OMO.#: OMO-FGB3040ET-1190

    		 全新原裝
    FGB3040G2-F085

    Mfr.#: FGB3040G2-F085

    OMO.#: OMO-FGB3040G2-F085-ON-SEMICONDUCTOR

    		 IGBT 400V 41A TO263
    FGB3056_F085

    Mfr.#: FGB3056_F085

    OMO.#: OMO-FGB3056-F085-1190

    		 ECOSPARK IGNITION IGBT - Tape and Reel (Alt: FGB3056_F085)
    FGB30N6S2DT

    Mfr.#: FGB30N6S2DT

    OMO.#: OMO-FGB30N6S2DT-ON-SEMICONDUCTOR

    		 IGBT 600V 45A 167W TO263AB
    FGB30N6S2T

    Mfr.#: FGB30N6S2T

    OMO.#: OMO-FGB30N6S2T-ON-SEMICONDUCTOR

    		 IGBT 600V 45A 167W TO263AB
    FGB3236-F085

    Mfr.#: FGB3236-F085

    OMO.#: OMO-FGB3236-F085-ON-SEMICONDUCTOR

    		 IGBT 360V 44A 187W D2PAK
    FGB3245G2-F085

    Mfr.#: FGB3245G2-F085

    OMO.#: OMO-FGB3245G2-F085-ON-SEMICONDUCTOR

    		 ECOSPARK2 450V IGNITION IGBT
    FGB35N33BT

    Mfr.#: FGB35N33BT

    OMO.#: OMO-FGB35N33BT-1190

    		 全新原裝
    可用性
    庫存:
    840
    訂購:
    2823
    輸入數量:
    FGB3040CS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.33
    US$3.33
    10
    US$2.83
    US$28.30
    100
    US$2.46
    US$246.00
    250
    US$2.33
    US$582.50
    500
    US$2.09
    US$1 045.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
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