FCU600N65S3R0

Mfr. #:: FCU600N65S3R0
製造商:: ON Semiconductor
描述:: MOSFET SUPERFET3 650V 6A 600 mOhm
生命週期:: 製造商新產品
數據表:: FCU600N65S3R0 數據表
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ECAD Model:
更多信息:: FCU600N65S3R0 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: DPAK-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 650 V

Id - 連續漏極電流：: 6 A

Rds On - 漏源電阻：: 600 mOhms

Vgs th - 柵源閾值電壓：: 2.5 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 11 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 54 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

系列：: SuperFET3

品牌：: 安森美半導體

正向跨導 - 最小值：: 3.6 S

秋季時間：: 14 ns

產品類別：: MOSFET

上升時間：: 9 ns

出廠包裝數量：: 1800

子類別：: MOSFET

典型關斷延遲時間：: 29 ns

典型的開啟延遲時間：: 11 ns

Tags: FCU

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCU600N65S3R0 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

***et: SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube

***ical: Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) IPAK Tube

***Components: SUPERFET3 650V IPAK PKG

***ark: Mosfet, N-Ch, 650V, 6A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.493Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipationrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 6A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.493ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:54W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET III Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 650V, 6A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.493ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:54W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET III Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

FCU600N65S3R0 更多信息

SuperFET® III MOSFETs: ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.

Market price

型號	製造商	描述	庫存	價格
FCU600N65S3R0 DISTI # V99:2348_21690178	ON Semiconductor	N-Channel MOSFET	1800	2550:$0.4648 525:$0.6388 150:$0.7217 75:$0.9187 10:$1.0308 1:$1.1986
FCU600N65S3R0 DISTI # V36:1790_21690178	ON Semiconductor	N-Channel MOSFET	0	1800000:$0.3932 900000:$0.3958 180000:$0.6269 18000:$1.0320 1800:$1.1000
FCU600N65S3R0 DISTI # FCU600N65S3R0OS-ND	ON Semiconductor	SUPERFET3 650V IPAK PKG RoHS: Not compliant Min Qty: 1 Container: Tube	1790In Stock	5400:$0.4713 3600:$0.4961 1800:$0.5316 100:$0.8151 25:$0.9924 10:$1.0450 1:$1.1700
FCU600N65S3R0 DISTI # 31283977	ON Semiconductor	N-Channel MOSFET	10800	1800:$1.1000
FCU600N65S3R0 DISTI # 31315867	ON Semiconductor	N-Channel MOSFET	1800	14:$1.1986
FCU600N65S3R0 DISTI # FCU600N65S3R0	ON Semiconductor	SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube - Rail/Tube (Alt: FCU600N65S3R0) RoHS: Compliant Min Qty: 1800 Container: Tube	Americas - 0	18000:$0.4159 9000:$0.4269 5400:$0.4319 3600:$0.4379 1800:$0.4409
FCU600N65S3R0 DISTI # 62AC6867	ON Semiconductor	MOSFET, N-CH, 650V, 6A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.493ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power DissipationRoHS Compliant: Yes	1795	10000:$0.4360 2500:$0.4520 1000:$0.5110 500:$0.6470 100:$0.7320 10:$0.9530 1:$1.1100
FCU600N65S3R0 DISTI # 863-FCU600N65S3R0	ON Semiconductor	MOSFET SUPERFET3 650V 6A 600 mOhm RoHS: Compliant	1656	1:$1.1000 10:$0.9440 100:$0.7250 500:$0.6410 1000:$0.5060 2500:$0.4480 10000:$0.4320
FCU600N65S3R0 DISTI # 2895718	ON Semiconductor	MOSFET, N-CH, 650V, 6A, TO-251 RoHS: Compliant	1790	5000:$0.7490 1000:$0.7940 500:$0.8590 250:$1.0500 100:$1.2800 25:$1.8800 5:$2.1900
FCU600N65S3R0 DISTI # 2895718	ON Semiconductor	MOSFET, N-CH, 650V, 6A, TO-251	1790	500:£0.4650 250:£0.4950 100:£0.5250 10:£0.7370 1:£0.9110

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