SIHB100N60E-GE3

Mfr. #:: SIHB100N60E-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
生命週期:: 製造商新產品
數據表:: SIHB100N60E-GE3 數據表
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更多信息:: SIHB100N60E-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 30 A

Rds On - 漏源電阻：: 100 mOhms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 50 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 208 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

系列：: E

晶體管類型：: 1 N-Channel

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 11 S

秋季時間：: 20 ns

產品類別：: MOSFET

上升時間：: 34 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 33 ns

典型的開啟延遲時間：: 21 ns

Tags: SIHB10, SIHB1, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB100N60E-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHB100N60E-GE3 DISTI # V72:2272_22759358	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V	997	75000:$2.4230 30000:$2.4970 15000:$2.5709 6000:$2.6450 3000:$2.7190 1000:$2.7930 500:$2.8670 250:$3.0950 100:$3.1840 50:$3.7040 25:$4.1110 10:$4.1960 1:$5.5286
SIHB100N60E-GE3 DISTI # SIHB100N60E-GE3-ND	Vishay Siliconix	MOSFET E SERIES 600V D2PAK (TO-2 RoHS: Compliant Min Qty: 1 Container: Tube	1002In Stock	3000:$2.5444 1000:$2.6783 100:$3.7305 25:$4.3044 10:$4.5530 1:$5.0700
SIHB100N60E-GE3 DISTI # 31697667	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V	997	6000:$2.6450 3000:$2.7190 1000:$2.7930 500:$2.8670 250:$3.0950 100:$3.1840 50:$3.7040 25:$4.1110 10:$4.1960 3:$5.5286
SIHB100N60E-GE3 DISTI # SIHB100N60E-GE3	Vishay Intertechnologies	N-CHANNEL 600V - Tape and Reel (Alt: SIHB100N60E-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.2900 4000:$2.3900 6000:$2.3900 2000:$2.4900 1000:$2.5900
SIHB100N60E-GE3 DISTI # 03AH2966	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.086ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes	50	500:$3.0500 100:$3.5100 50:$3.7600 25:$4.0100 10:$4.2600 1:$5.1500
SIHB100N60E-GE3 DISTI # 78-SIHB100N60E-GE3	Vishay Intertechnologies	MOSFET 650V Vds,30V Vgs D2PAK (TO-263) RoHS: Compliant	985	1:$5.1000 10:$4.2200 100:$3.4700 250:$3.3700 500:$3.0200 1000:$2.5500 2000:$2.4200
SIHB100N60E-GE3 DISTI # 3019075	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263 RoHS: Compliant	50	1000:$3.2300 500:$3.5500 250:$3.7900 100:$3.9200 10:$4.7700 1:$5.9600
SIHB100N60E-GE3 DISTI # 3019075	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263	50	500:£2.2600 250:£2.5200 100:£2.6000 10:£3.1500 1:£4.2400

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