SIHF12N60E-GE3

SIHF12N60E-GE3
Mfr. #:
SIHF12N60E-GE3
製造商:
Vishay
描述:
IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHF12N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
Tags
SIHF12N60, SIHF12N6, SIHF12N, SIHF12, SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 600 V 0.38 O 58 nC Flange Mount Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-220FP
***ark
MOSFET, N-CH, 600V, 12A, TO-220FP
***i-Key
MOSFET N-CH 600V 12A TO220 FULLP
***ronik
N-CH 650V 12A 380mOhm TO220-3
***
N-CH 600V TO220 FULLPK
***nell
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
型號 製造商 描述 庫存 價格
SIHF12N60E-GE3
DISTI # V72:2272_09218848
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP1000
  • 75000:$1.3330
  • 30000:$1.3470
  • 15000:$1.3620
  • 6000:$1.3759
  • 3000:$1.3900
  • 1000:$1.4040
  • 500:$1.4150
  • 250:$1.5870
  • 100:$1.6040
  • 50:$1.8590
  • 25:$2.0050
  • 10:$2.0280
  • 1:$2.3630
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3CT-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO220 FULLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
962In Stock
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3TR-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO220 FULLP
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.4514
SIHF12N60E-GE3
DISTI # 25790517
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP1000
  • 1000:$1.4040
  • 500:$1.4150
  • 250:$1.5870
  • 100:$1.6040
  • 50:$1.8590
  • 25:$2.0050
  • 10:$2.0280
  • 5:$2.3630
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.0900
  • 10000:$1.0900
SIHF12N60E-GE3
DISTI # 19X1934
Vishay IntertechnologiesMOSFET Transistor, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V RoHS Compliant: Yes595
  • 1:$2.8300
  • 10:$2.3500
  • 25:$2.1700
  • 50:$2.0000
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60E-GE3
DISTI # 78-SIHF12N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
825
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60E-E3
DISTI # 781-SIHF12N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
782
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
Europe - 500
    SIHF12N60EGE3Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 500
      SIHF12N60E-GE3
      DISTI # 2364076
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
      RoHS: Compliant
      595
      • 1:$4.4800
      • 10:$3.7200
      • 100:$2.8800
      • 500:$2.5400
      SIHF12N60E-GE3
      DISTI # 2364076
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
      RoHS: Compliant
      611
      • 1:£2.7200
      • 10:£1.9000
      • 100:£1.4700
      • 250:£1.3900
      • 500:£1.2900
      SIHF12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      RoHS: Compliant
      Americas -
        SIHF12N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        RoHS: Compliant
        Americas -
          SIHF12N60E-GE3
          DISTI # C1S803601752554
          Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak
          RoHS: Compliant
          1000
          • 100:$1.6040
          • 50:$1.8590
          • 25:$2.0050
          • 10:$2.0280
          • 1:$2.3630
          圖片 型號 描述
          SIHF12N50C-E3

          Mfr.#: SIHF12N50C-E3

          OMO.#: OMO-SIHF12N50C-E3

          MOSFET N-Channel 500V
          SIHF12N65E-GE3

          Mfr.#: SIHF12N65E-GE3

          OMO.#: OMO-SIHF12N65E-GE3

          MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-E3

          Mfr.#: SIHF12N60E-E3

          OMO.#: OMO-SIHF12N60E-E3

          MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-GE3

          Mfr.#: SIHF12N60E-GE3

          OMO.#: OMO-SIHF12N60E-GE3

          MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-GE3

          Mfr.#: SIHF12N60E-GE3

          OMO.#: OMO-SIHF12N60E-GE3-VISHAY

          IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
          SIHF12N65E-GE3

          Mfr.#: SIHF12N65E-GE3

          OMO.#: OMO-SIHF12N65E-GE3-VISHAY

          IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
          SIHF12N60E

          Mfr.#: SIHF12N60E

          OMO.#: OMO-SIHF12N60E-1190

          全新原裝
          SIHF12N60E-E3

          Mfr.#: SIHF12N60E-E3

          OMO.#: OMO-SIHF12N60E-E3-VISHAY

          MOSFET N-CH 600V 12A TO220 FULLP
          SIHF12N60EGE3

          Mfr.#: SIHF12N60EGE3

          OMO.#: OMO-SIHF12N60EGE3-1190

          Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          SIHF12N65E

          Mfr.#: SIHF12N65E

          OMO.#: OMO-SIHF12N65E-1190

          全新原裝
          可用性
          庫存:
          Available
          訂購:
          3500
          輸入數量:
          SIHF12N60E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
          數量
          單價
          小計金額
          1
          US$1.64
          US$1.64
          10
          US$1.55
          US$15.53
          100
          US$1.47
          US$147.15
          500
          US$1.39
          US$694.90
          1000
          US$1.31
          US$1 308.00
          由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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