IPD60R3K3C6ATMA1

Mfr. #:: IPD60R3K3C6ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 650V 1.7A DPAK-2
生命週期:: 製造商新產品
數據表:: IPD60R3K3C6ATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 1.7 A

Rds On - 漏源電阻：: 3.3 Ohms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 4.6 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 18.1 W

配置：: 單身的

商品名：: 酷摩

打包：: 捲軸

高度：: 2.3 mm

長度：: 6.5 mm

系列：: CoolMOS C6

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 英飛凌科技

秋季時間：: 60 ns

產品類別：: MOSFET

上升時間：: 10 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 40 ns

典型的開啟延遲時間：: 8 ns

第 # 部分別名：: IPD60R3K3C6 SP001117718

單位重量：: 0.139332 oz

Tags: IPD60R3K3, IPD60R3K, IPD60R3, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R3K3C6ATMA1 描述

*** Source Electronics: MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 18.1W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

型號	製造商	描述	庫存	價格
IPD60R3K3C6ATMA1 DISTI # V72:2272_06391031	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.3062 500:$0.3279 250:$0.3643 100:$0.4048 25:$0.5469 10:$0.6856 1:$0.8203
IPD60R3K3C6ATMA1 DISTI # V36:1790_06391031	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD60R3K3C6ATMA1 DISTI # IPD60R3K3C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	25000:$0.2369 12500:$0.2420 5000:$0.2513 2500:$0.2699
IPD60R3K3C6ATMA1 DISTI # IPD60R3K3C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call	1000:$0.3067 500:$0.3834 100:$0.4850 10:$0.6330 1:$0.7200
IPD60R3K3C6ATMA1 DISTI # IPD60R3K3C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call	1000:$0.3067 500:$0.3834 100:$0.4850 10:$0.6330 1:$0.7200
IPD60R3K3C6ATMA1 DISTI # 20336743	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	12500	2500:$0.2129
IPD60R3K3C6ATMA1 DISTI # 31627991	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.3176 500:$0.3279 250:$0.3643 100:$0.4048 30:$0.6006
IPD60R3K3C6ATMA1 DISTI # IPD60R3K3C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R3K3C6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2150 15000:$0.2189 10000:$0.2265 5000:$0.2350 2500:$0.2438
IPD60R3K3C6ATMA1 DISTI # 13AC9045	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 13AC9045) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0
IPD60R3K3C6ATMA1 DISTI # SP001117718	Infineon Technologies AG	Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R (Alt: SP001117718) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2339 15000:€0.2519 10000:€0.2799 5000:€0.3139 2500:€0.3699
IPD60R3K3C6ATMA1 DISTI # 13AC9045	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.97ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	3766	1000:$0.2740 500:$0.2970 250:$0.3190 100:$0.3420 50:$0.4050 25:$0.4680 10:$0.5300 1:$0.6360
IPD60R3K3C6ATMA1. DISTI # 27AC6732	Infineon Technologies AG	LOW POWER_LEGACY ROHS COMPLIANT: YES	0	25000:$0.2180 15000:$0.2220 10000:$0.2300 5000:$0.2380 1:$0.2470
IPD60R3K3C6ATMA1 DISTI # 726-IPD60R3K3C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 650V 1.7A DPAK-2	0	1:$0.6300 10:$0.5250 100:$0.3390 1000:$0.2710
IPD60R3K3C6ATMA1 DISTI # 2726052	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3 RoHS: Compliant	3715	1000:$0.4660 500:$0.5820 100:$0.7850 10:$1.0200 1:$1.1700
IPD60R3K3C6ATMA1 DISTI # 2726052	Infineon Technologies AG	MOSFET, N-CH, 600V, 1.7A, TO-252-3	3720	500:£0.2280 250:£0.2460 100:£0.2650 25:£0.4280 5:£0.4620

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