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FDMA8051L

FDMA8051L
Mfr. #:
FDMA8051L
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 40V 14.0 MOHM MLP22
生命週期:
製造商新產品
數據表:
FDMA8051L 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMA8051L 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
MicroFET-6
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
40 V
Id - 連續漏極電流：
10 A
Rds On - 漏源電阻：
18 mOhms
Vgs th - 柵源閾值電壓：
1.6 V
Qg - 門電荷：
14 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.4 W
配置：
單身的
商品名：
動力戰壕
打包：
捲軸
高度：
0.75 mm
長度：
2 mm
系列：
FDMA8051L
晶體管類型：
1 N-Channel
寬度：
2 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
1.8 ns
產品類別：
MOSFET
上升時間：
1.8 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
17 ns
典型的開啟延遲時間：
6.4 ns
單位重量：
0.001058 oz
Tags
FDMA8, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 40V, 10A, 14mΩ
***Yang
Transistor MOSFET N-CH 40V 10A 6-Pin WDFN T/R - Tape and Reel
***sible Micro
Transistor, MOSFET, N-Channel, 2x2mm, 40V, 10A, 2.4W, 6-WDF
***ment14 APAC
MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:40V; On Resistance
***rchild Semiconductor
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
***nell
MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***p One Stop Global
Trans MOSFET P-CH 40V 10.8A Automotive 3-Pin(2+Tab) TO-252 T/R
***ure Electronics
P-Channel 40 V 12.3 mOhm 50 nC Surface Mount PowerTrench Mosfet - DPAK
***roFlash
Power Field-Effect Transistor, 10.8A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
***Yang
Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)
***emi
PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 40V, 0.0187ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
***nell
MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69
***emi
P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ
*** Electronics
ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount
***Yang
Trans MOSFET P-CH 40V 11A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET, P, SMD, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:-40V; Voltage Vgs Max:-1.4V; Voltage Vgs Rds on Measurement:-10V
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
***ure Electronics
Single N-Channel 30 V 10 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 12 mOhm OptiMOS™3 Power-Mosfet - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:39A; Power Dissipation Pd:28W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ark
Mosfet Transistor, N Channel, 13 A, 30 V, 10 Mohm, 10 V, 1.8 V
***et Japan
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, 30V, 13A, 10 mOhm, 9.5 nC Qg, SO-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipa
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDMA8051L
DISTI # V72:2272_06337828		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R2400
  • 1000:$0.4423
  • 500:$0.5409
  • 250:$0.5782
  • 100:$0.6425
  • 25:$0.7501
  • 10:$0.9168
  • 1:$1.0844
FDMA8051L
DISTI # V36:1790_06337828		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R0
  • 3000000:$0.3495
  • 1500000:$0.3497
  • 300000:$0.3642
  • 30000:$0.3873
  • 3000:$0.3911
FDMA8051L
DISTI # FDMA8051LCT-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11812In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
FDMA8051L
DISTI # FDMA8051LDKR-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11812In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
FDMA8051L
DISTI # FDMA8051LTR-ND		ON SemiconductorMOSFET N-CH 40V 6-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.3325
  • 15000:$0.3360
  • 6000:$0.3491
  • 3000:$0.3675
FDMA8051L
DISTI # 31984721		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R2400
  • 20:$1.0844
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R (Alt: FDMA8051L)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3099
  • 18000:€0.3339
  • 12000:€0.3619
  • 6000:€0.3949
  • 3000:€0.4829
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Tape and Reel (Alt: FDMA8051L)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3079
  • 18000:$0.3159
  • 12000:$0.3199
  • 6000:$0.3239
  • 3000:$0.3259
FDMA8051L
DISTI # FDMA8051L		ON SemiconductorTrans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Bulk (Alt: FDMA8051L)
Min Qty: 893
Container: Bulk		Americas - 0
  • 8930:$0.3449
  • 4465:$0.3539
  • 2679:$0.3579
  • 1786:$0.3629
  • 893:$0.3659
FDMA8051L
DISTI # 38X5350		ON SemiconductorFET 40V 14.0 MOHM MLP22 / REEL0
  • 24000:$0.3220
  • 9000:$0.3320
  • 1:$0.3450
FDMA8051L
DISTI # 99AC9164		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes0
  • 1000:$0.3790
  • 500:$0.4810
  • 250:$0.5120
  • 100:$0.5430
  • 50:$0.5980
  • 25:$0.6520
  • 10:$0.7070
  • 1:$0.8380
FDMA8051L.
DISTI # 96AC0017		ON SemiconductorFET 40V 14.0 MOHM MLP22 ROHS COMPLIANT: YES3000
  • 24000:$0.3220
  • 9000:$0.3320
  • 1:$0.3450
FDMA8051L
DISTI # 512-FDMA8051L		ON SemiconductorMOSFET FET 40V 14.0 MOHM MLP22
RoHS: Compliant		5080
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 3000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
FDMA8051LON SemiconductorSmall Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		4120
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
FDMA8051LFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		502
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
FDMA8051L
DISTI # 8648170P		ON SemiconductorMOSFET N-CH 40V 10A POWERTRENCH MLP6, RL14310
  • 3000:£0.2920
  • 1000:£0.3170
  • 500:£0.4030
  • 50:£0.4970
FDMA8051L
DISTI # 2992326		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN
RoHS: Compliant		3000
  • 1000:$0.4730
  • 500:$0.5330
  • 250:$0.5880
  • 100:$0.6440
  • 25:$0.9740
  • 5:$1.0700
FDMA8051L
DISTI # 2992326		ON SemiconductorMOSFET, N-CH, 40V, 10A, 2.4W, WDFN3000
  • 500:£0.3450
  • 250:£0.3680
  • 100:£0.3900
  • 10:£0.5570
  • 1:£0.6880
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V40DL45HM3_A/I

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Mfr.#: EMHS500ARA471MKG5S

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可用性
庫存:
Available
訂購:
1988
輸入數量:
FDMA8051L的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.83
US$0.83
10
US$0.70
US$7.00
100
US$0.54
US$53.80
500
US$0.48
US$238.00
1000
US$0.38
US$375.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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