KST3906MTF

KST3906MTF
Mfr. #:
KST3906MTF
製造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
生命週期:
製造商新產品
數據表:
KST3906MTF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
雙極晶體管 - BJT
RoHS:
Y
安裝方式:
貼片/貼片
包裝/案例:
SOT-23-3
晶體管極性:
PNP
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
- 40 V
集電極-基極電壓 VCBO:
- 40 V
發射極基極電壓 VEBO:
- 5 V
集電極-發射極飽和電壓:
- 0.4 V
最大直流集電極電流:
0.2 A
增益帶寬積 fT:
250 MHz
最高工作溫度:
+ 150 C
系列:
KST3906
直流電流增益 hFE 最大值:
300
高度:
0.93 mm
長度:
2.92 mm
打包:
捲軸
寬度:
1.3 mm
品牌:
安森美半導體/飛兆半導體
連續集電極電流:
- 0.2 A
Pd - 功耗:
350 mW
產品類別:
BJT - 雙極晶體管
出廠包裝數量:
3000
子類別:
晶體管
第 # 部分別名:
KST3906MTF_NL
單位重量:
0.000282 oz
Tags
KST3906M, KST3906, KST39, KST3, KST
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
KST3906 Series 40 V 200 mA 350 mW PNP Epitaxial Silicon Transistor - SOT-23-3
***r Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
***et Europe
Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R
***i-Key
TRANSISTOR PNP 40V 200MA SOT23
***enic
SOT-23-3 Bipolar Transistors - BJT ROHS
型號 製造商 描述 庫存 價格
KST3906MTF
DISTI # KST3906MTFCT-ND
ON SemiconductorTRANS PNP 40V 0.2A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2712In Stock
  • 1000:$0.0441
  • 500:$0.0649
  • 100:$0.0986
  • 10:$0.1860
  • 1:$0.2300
KST3906MTF
DISTI # KST3906MTFTR-ND
ON SemiconductorTRANS PNP 40V 0.2A SOT23
RoHS: Compliant
Min Qty: 12000
Container: Tape & Reel (TR)
Limited Supply - Call
    KST3906MTF
    DISTI # KST3906MTFDKR-ND
    ON SemiconductorTRANS PNP 40V 0.2A SOT23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      KST3906MTF.
      DISTI # 23AC6024
      Fairchild Semiconductor CorporationPNP/40V/0.2A/100-300 ROHS COMPLIANT: YES0
        KST3906MTF
        DISTI # 512-KST3906MTF
        ON SemiconductorBipolar Transistors - BJT PNP Si Transistor Epitaxial
        RoHS: Compliant
        4765
        • 1:$0.2200
        • 10:$0.1440
        • 100:$0.0600
        • 1000:$0.0410
        • 3000:$0.0320
        • 9000:$0.0280
        • 24000:$0.0260
        • 45000:$0.0240
        KST3906MTFON Semiconductor 
        RoHS: Not Compliant
        6000
        • 1:$0.0300
        • 25:$0.0300
        • 100:$0.0300
        • 500:$0.0300
        • 1000:$0.0300
        KST3906MTFFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
        RoHS: Compliant
        62779
        • 1:$0.0300
        • 25:$0.0300
        • 100:$0.0300
        • 500:$0.0300
        • 1000:$0.0300
        KST3906-MTF Bipolar Junction Transistor, PNP Type, SOT-232770
        • 1710:$0.0910
        • 343:$0.1170
        • 1:$0.2600
        KST3906-MTFSamsung SemiconductorBipolar Junction Transistor, PNP Type, SOT-233040
        • 1112:$0.0300
        • 134:$0.0450
        • 1:$0.1500
        KST3906-MTFSamsung Semiconductor 3800
        • 45:$0.1125
        • 135:$0.0563
        • 890:$0.0338
        KST3906MTFFairchild Semiconductor Corporation 8775
          圖片 型號 描述
          IPD90P03P4L-04

          Mfr.#: IPD90P03P4L-04

          OMO.#: OMO-IPD90P03P4L-04

          MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2
          105SMH050M

          Mfr.#: 105SMH050M

          OMO.#: OMO-105SMH050M

          Aluminum Electrolytic Capacitors - SMD 1uF 50V 20% tol. ELECTROLYTIC
          C1206C152KGRACAUTO

          Mfr.#: C1206C152KGRACAUTO

          OMO.#: OMO-C1206C152KGRACAUTO

          Multilayer Ceramic Capacitors MLCC - SMD/SMT 2kV 1500pF X7R 10% Flex Term AEC-Q200
          C1206X103KARACAUTO

          Mfr.#: C1206X103KARACAUTO

          OMO.#: OMO-C1206X103KARACAUTO

          Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.01uF X7R 1206 10% AEC-Q200
          RF311-5/G

          Mfr.#: RF311-5/G

          OMO.#: OMO-RF311-5-G-641

          High Frequency / RF Relays 5V SPDT RF TO-5 High Repeat
          IPD90P03P4L-04

          Mfr.#: IPD90P03P4L-04

          OMO.#: OMO-IPD90P03P4L-04-1190

          Trans MOSFET P-CH 30V 90A Automotive 3-Pin(2+Tab) TO-252
          REC30-2415D

          Mfr.#: REC30-2415D

          OMO.#: OMO-REC30-2415D-RECOM-POWER

          30W DC/DC-Converter 'ECONOLINE' 2 x1.6 1.6kV reg , V. In: 18-36, V. Out: +/-15, mA. Out: +/-1000
          可用性
          庫存:
          289
          訂購:
          2272
          輸入數量:
          KST3906MTF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          從...開始
          最新產品
          • Gate Drivers
            The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
          • NCP137 700 mA LDO Regulators
            ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
          • NCP114 Low Dropout Regulators
            ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
          • Compare KST3906MTF
            KST3906MT vs KST3906MTF vs KST3906MTFNL
          • LC717A00AR Touch Sensor
            These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
          • FDMQ86530L Quad-MOSFET
            ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
          Top