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AIGW40N65H5XKSA1

AIGW40N65H5XKSA1
Mfr. #:
AIGW40N65H5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors DISCRETES
生命週期:
製造商新產品
數據表:
AIGW40N65H5XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
AIGW40N65H5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
PG-TO247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.66 V
最大柵極發射極電壓：
30 V
25 C 時的連續集電極電流：
74 A
Pd - 功耗：
250 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nS
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
AIGW40N65H5 SP001346886
Tags
AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 74A, 250W, To-247 Rohs Compliant: Yes |Infineon AIGW40N65H5XKSA1
***nell
IGBT, AEC-Q101, 650V, 74A, 250W, TO-247; DC Collector Current: 74A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型號 製造商 描述 庫存 價格
AIGW40N65H5XKSA1
DISTI # AIGW40N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 2640:$3.2081
  • 720:$3.9941
  • 240:$4.6918
  • 25:$5.4136
  • 10:$5.7260
  • 1:$6.3800
AIGW40N65H5XKSA1
DISTI # AIGW40N65H5XKSA1		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW40N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.8900
  • 2400:$2.8900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.2900
AIGW40N65H5XKSA1
DISTI # SP001346886		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V (Alt: SP001346886)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€2.6900
  • 1000:€2.6900
  • 100:€2.7900
  • 50:€2.8900
  • 25:€2.9900
  • 10:€3.2900
  • 1:€4.0900
AIGW40N65H5XKSA1
DISTI # 93AC6941		Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247 ROHS COMPLIANT: YES240
  • 500:$3.8400
  • 250:$4.2800
  • 100:$4.5000
  • 50:$4.7400
  • 25:$4.9700
  • 10:$5.2000
  • 1:$6.1200
AIGW40N65H5XKSA1
DISTI # 726-AIGW40N65H5XKSA1		Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant		240
  • 1:$6.0600
  • 10:$5.1500
  • 100:$4.4600
  • 250:$4.2400
  • 500:$3.8000
AIGW40N65H5XKSA1
DISTI # 2986329		Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247
RoHS: Compliant		240
  • 1000:$4.6800
  • 500:$5.0300
  • 250:$5.5500
  • 100:$5.8200
  • 10:$6.6600
  • 1:$8.4900
AIGW40N65H5XKSA1
DISTI # 2986329		Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247240
  • 500:£2.7500
  • 250:£3.0700
  • 100:£3.2300
  • 10:£3.7300
  • 1:£4.8500
圖片 型號 描述
AIGW40N65F5XKSA1

Mfr.#: AIGW40N65F5XKSA1

OMO.#: OMO-AIGW40N65F5XKSA1

 IGBT Transistors DISCRETES
AIGW40N65H5XKSA1

Mfr.#: AIGW40N65H5XKSA1

OMO.#: OMO-AIGW40N65H5XKSA1

 IGBT Transistors DISCRETES
AIGW40N65F5XKSA1

Mfr.#: AIGW40N65F5XKSA1

OMO.#: OMO-AIGW40N65F5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
AIGW40N65H5XKSA1

Mfr.#: AIGW40N65H5XKSA1

OMO.#: OMO-AIGW40N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
可用性
庫存:
240
訂購:
2223
輸入數量:
AIGW40N65H5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$6.06
US$6.06
10
US$5.15
US$51.50
100
US$4.46
US$446.00
250
US$4.24
US$1 060.00
500
US$3.80
US$1 900.00
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