AIGW50N65H5XKSA1

Mfr. #:: AIGW50N65H5XKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors DISCRETES
生命週期:: 製造商新產品
數據表:: AIGW50N65H5XKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: AIGW50N65H5XKSA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 1.66 V

最大柵極發射極電壓：: 30 V

25 C 時的連續集電極電流：: 80 A

Pd - 功耗：: 270 W

最低工作溫度：: - 40 C

最高工作溫度：: + 175 C

系列：: TRENCHSTOP 5 H5

打包：: 管子

品牌：: 英飛凌科技

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 240

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: AIGW50N65H5 SP001346878

單位重量：: 0.211644 oz

Tags: AIGW5, AIGW, AIG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AIGW50N65H5XKSA1 描述

***ark: Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes |Infineon AIGW50N65H5XKSA1

***nell: IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.

***ineon SCT: TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***ineon: TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter

AIGW50N65H5XKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

型號	製造商	描述	庫存	價格
AIGW50N65H5XKSA1 DISTI # AIGW50N65H5XKSA1-ND	Infineon Technologies AG	IGBT 650V TO247-3 Min Qty: 1 Container: Tube	240In Stock	1000:$3.6641 500:$4.2069 100:$4.8312 10:$5.8350 1:$6.4600
AIGW50N65H5XKSA1 DISTI # AIGW50N65H5XKSA1	Infineon Technologies AG	Infineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW50N65H5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.2845 1440:$3.3440 960:$3.4604 480:$3.5901 240:$3.7246
AIGW50N65H5XKSA1 DISTI # 93AC6943	Infineon Technologies AG	IGBT, AEC-Q101, 650V, 80A, 270W, TO-247 ROHS COMPLIANT: YES RoHS: Compliant	240	500:$3.2000 250:$3.5100 100:$3.6800 50:$3.9600 25:$4.2400 10:$4.4400 1:$4.9100
AIGW50N65H5XKSA1 DISTI # 726-AIGW50N65H5XKSA1	Infineon Technologies AG	IGBT Transistors DISCRETES RoHS: Compliant	204	1:$6.1400 10:$5.5500 25:$5.3000 100:$4.6000 250:$4.3900 500:$4.0000
AIGW50N65H5XKSA1 DISTI # 2986331	Infineon Technologies AG	IGBT, AEC-Q101, 650V, 80A, 270W, TO-247 RoHS: Compliant	240	1000:£3.0100 500:£3.1000 250:£3.4000 100:£3.5600 10:£4.1200 1:£5.2400
AIGW50N65H5XKSA1 DISTI # 2986331	Infineon Technologies AG	IGBT, AEC-Q101, 650V, 80A, 270W, TO-247 RoHS: Compliant	240	500:$5.7300 250:$6.2900 100:$6.5900 25:$7.6000 10:$7.9500 1:$8.7900

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