IXFN120N20

Mfr. #:: IXFN120N20
製造商:: Littelfuse
描述:: MOSFET 200V 120A
生命週期:: 製造商新產品
數據表:: IXFN120N20 數據表
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ECAD Model:

產品屬性
屬性值

製造商: IXYS

產品分類: FET - 單

系列: IXFN120N20

打包: 管子

單位重量: 1.340411 oz

安裝方式: 貼片/貼片

商品名: 超場效應晶體管

包裝盒: SOT-227-4

技術: 矽

通道數: 1 Channel

配置: 單雙源

晶體管型: 1 N-Channel

鈀功耗: 600 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 40 ns

上升時間: 55 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 120 A

Vds-漏-源-擊穿電壓: 200 V

Rds-On-Drain-Source-Resistance: 17 mOhms

晶體管極性: N通道

典型關斷延遲時間: 110 ns

典型開啟延遲時間: 42 ns

正向跨導最小值: 77 S

通道模式: 增強

Tags: IXFN120N2, IXFN12, IXFN1, IXFN, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFN120N20 描述

***ical: Trans MOSFET N-CH Si 200V 120A 4-Pin SOT-227B

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SOT-227B Polarity: N Variants: Enhancement mode Power dissipation: 600 W

***ark: Mosfet, N, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
IXFN120N20 DISTI # IXFN120N20-ND	IXYS Corporation	MOSFET N-CH 200V 120A SOT-227B RoHS: Compliant Min Qty: 1 Container: Tube	148In Stock	500:$19.6926 250:$20.6915 100:$22.5466 30:$24.2590 10:$26.4000 1:$28.5400
IXFN120N20 DISTI # 97K2549	IXYS Corporation	MOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:600W RoHS Compliant: Yes	16	250:$20.6900 100:$22.5500 50:$23.2300 25:$24.0200 10:$24.8200 5:$25.6100 1:$26.4000
IXFN120N20 DISTI # 747-IXFN120N20	IXYS Corporation	MOSFET 200V 120A RoHS: Compliant	0
IXFN120N20 DISTI # 9359257	IXYS Corporation	MOSFET, N, SOT-227B RoHS: Compliant	16	250:$30.9600 100:$33.7300 30:$36.3000 10:$39.5000 1:$42.7000
IXFN120N20 DISTI # 9359257	IXYS Corporation	MOSFET, N, SOT-227B RoHS: Compliant	23	100:£16.5800 50:£18.6200 10:£19.4400 5:£21.4400 1:£23.4400

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