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BSC097N06NSATMA1

BSC097N06NSATMA1
Mfr. #:
BSC097N06NSATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 46A TDSON-8
生命週期:
製造商新產品
數據表:
BSC097N06NSATMA1 數據表
交貨:
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支付:
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HTML Datasheet:
BSC097N06NSATMA1 DatasheetBSC097N06NSATMA1 Datasheet (P4-P6)BSC097N06NSATMA1 Datasheet (P7-P9)BSC097N06NSATMA1 Datasheet (P10)
ECAD Model:
更多信息:
BSC097N06NSATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
46 A
Rds On - 漏源電阻：
8 mOhms
Vgs th - 柵源閾值電壓：
2.1 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
15 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
36 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 5
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
24 S
秋季時間：
2 ns
產品類別：
MOSFET
上升時間：
2 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
10 ns
典型的開啟延遲時間：
6 ns
第 # 部分別名：
BSC097N06NS SP001067004
單位重量：
0.003527 oz
Tags
BSC097, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC097N06NSATMA1
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 46A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 36W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 50A, 9.3mΩ Power MOSFET 60V, 50A, 9.3 mOhm, Single N-Channel, u8FL, Logic Level
***sible Micro
Transistor, MOSFET, N-CH, 60V, 13A, WDFN, SMD
***ical
Trans MOSFET N-CH 60V 13A 8-Pin WDFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
T6 60V NCH LL IN U8FL - Tape and Reel
***ark
Mosfet, N-Ch, 60V, 50A, Wdfn-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***ure Electronics
Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS™ Power Mosfet - TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor
***icontronic
Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, D2PAK
***ure Electronics
FQB50N06L Series 60 V 52.4 A 21 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 60V 52.4A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 52.4A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 121W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ineon SCT
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 60V 43A Automotive 3-Pin(2+Tab) DPAK Tube
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC Automotive HEXFET® Power Mosfet - DPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ark
MOSFET, N CH, 60V, 43A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:71W; No. of Pins:3 ;RoHS Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 60 V,50 A, 10 mΩ
***ical
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
***el Electronic
FAIRCHILD SEMICONDUCTOR FDD86580_F085 MOSFET Transistor, N Channel, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 VNew
***ure Electronics
Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 55V 47A 3-Pin (2+Tab) D2PAK T/R
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W
***eco
IRLZ44NSTRLPBF,MOSFET, 55V, 47 A, 22 MOHM, 32 NC QG, LOGIC L
***SIT Distribution GmbH
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:47A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes |Infineon IRLZ44NSTRLPBF.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型號 製造商 描述 庫存 價格
BSC097N06NSATMA1
DISTI # V72:2272_06384807		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R
RoHS: Compliant		4575
  • 3000:$0.3684
  • 1000:$0.3721
  • 500:$0.4479
  • 250:$0.4984
  • 100:$0.5470
  • 25:$0.6311
  • 10:$0.6755
  • 1:$0.7455
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4970In Stock
  • 1000:$0.4249
  • 500:$0.5382
  • 100:$0.6940
  • 10:$0.8780
  • 1:$0.9900
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4970In Stock
  • 1000:$0.4249
  • 500:$0.5382
  • 100:$0.6940
  • 10:$0.8780
  • 1:$0.9900
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3658
BSC097N06NSATMA1
DISTI # 31084170		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R
RoHS: Compliant		4575
  • 3000:$0.3684
  • 1000:$0.3721
  • 500:$0.4479
  • 250:$0.4984
  • 100:$0.5470
  • 25:$0.6310
  • 23:$0.6755
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC097N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2879
  • 10000:$0.2769
  • 20000:$0.2669
  • 30000:$0.2579
  • 50000:$0.2539
BSC097N06NSATMA1
DISTI # 97Y1250		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:46A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$0.8300
  • 10:$0.7000
  • 25:$0.6460
  • 50:$0.5920
  • 100:$0.5380
  • 250:$0.5070
  • 500:$0.4760
  • 1000:$0.3750
BSC097N06NSATMA1
DISTI # 726-BSC097N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 46A TDSON-8
RoHS: Compliant		4602
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 5000:$0.3330
BSC097N06NS
DISTI # 726-BSC097N06NS		Infineon Technologies AGMOSFET N-Ch 60V 46A TDSON-8
RoHS: Compliant		0
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 5000:$0.3330
BSC097N06NSATMA1Infineon Technologies AGSingle N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Compliant		5000Reel
  • 5000:$0.3100
BSC097N06NSATMA1
DISTI # 1109115P		Infineon Technologies AGMOSFET N-CHAN OPTIMOS 60V 46A TDSON8, RL825
  • 50:£0.4590
  • 250:£0.3890
  • 500:£0.3440
  • 1250:£0.2870
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,46A,36W,PG-TDSON-82250
  • 1:$0.6244
  • 3:$0.5530
  • 10:$0.4649
  • 100:$0.4167
  • 1000:$0.3880
BSC097N06NSATMA1
DISTI # 2617474		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.5800
  • 10:$1.4000
  • 100:$1.1100
  • 500:$0.8580
  • 1000:$0.6780
BSC097N06NSATMA1
DISTI # 2617474		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.6020
  • 25:£0.4640
  • 100:£0.4110
  • 250:£0.3930
  • 500:£0.3470
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可用性
庫存:
Available
訂購:
1992
輸入數量:
BSC097N06NSATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.82
US$0.82
10
US$0.70
US$7.00
100
US$0.54
US$53.80
500
US$0.48
US$238.00
1000
US$0.38
US$375.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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