IXA45IF1200HB

Mfr. #:: IXA45IF1200HB
製造商:: Littelfuse
描述:: IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
生命週期:: 製造商新產品
數據表:: IXA45IF1200HB 數據表
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更多信息:: IXA45IF1200HB 更多信息

產品屬性
屬性值

製造商: IXYS

產品分類: IGBT - 單

系列: IXA45IF1200HB

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

商品名: XPT

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247AD (HB)

配置: 單身的

最大功率: 325W

反向恢復時間trr: 350ns

電流收集器 Ic-Max: 78A

電壓收集器發射極擊穿最大值: 1200V

IGBT型: PT

電流收集器脈衝Icm: -

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 35A

開關能源: 3.8mJ (on), 4.1mJ (off)

柵極電荷: 106nC

Td-on-off-25°C: -

測試條件: 600V, 35A, 27 Ohm, 15V

鈀功耗: 325 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 1200 V

集電極-發射極-飽和-電壓: 1.8 V

25-C 時的連續集電極電流: 78 A

柵極-發射極-漏電流: 500 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 45 A

Tags: IXA45, IXA4, IXA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXA45IF1200HB 描述

***Components: In a Tube of 30, IXYS IXA45IF1200HB IGBT

***i-Key: IGBT 1200V 78A 325W TO247

***ukat: 1200V 78A 325W TO247AD

***nell: IGBT,1200V,74A,TO-247; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Max:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

***ark: XPT IGBT COPACK, 1200V, 78A, TO-247; DC Collector Current:78A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�CRoHS Compliant: Yes

***ment14 APAC: IGBT,1200V,74A,TO-247; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:325W

IXA45IF1200HB 更多信息

1200V XPT High Speed IGBTs: IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Market price

型號	製造商	描述	庫存	價格
IXA45IF1200HB DISTI # IXA45IF1200HB-ND	IXYS Corporation	IGBT 1200V 78A 325W TO247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$9.4493
IXA45IF1200HB DISTI # 83R9963	IXYS Corporation	XPT IGBT COPACK, 1200V, 78A, TO-247,DC Collector Current:78A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:325W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°CRoHS Compliant: Yes	0
IXA45IF1200HB DISTI # 747-IXA45IF1200HB	IXYS Corporation	IGBT Transistors N-Channel: Power MOSFET w/Fast Diode RoHS: Compliant	88	1:$11.5200 10:$10.3700 25:$9.4500 50:$8.6300 100:$8.5300 250:$7.7700 500:$7.1500 1000:$6.2200
IXA45IF1200HB DISTI # 8080262P	IXYS Corporation	IGBT N-CH 1200V 78A 1.8V XPT TO247AD, TU	60	250:£5.6100 50:£6.7500 20:£6.9200 10:£7.0900
IXA45IF1200HB DISTI # IXA45IF1200HB	IXYS Corporation	1200V 78A 325W TO247AD RoHS: Compliant	36	1:€9.1000 5:€6.1000 30:€5.1000 60:€4.9000
IXA45IF1200HB			3
IXA45IF1200HB DISTI # 1829724	IXYS Corporation	IGBT,1200V,74A,TO-247 RoHS: Compliant	0	1000:$9.3700 500:$10.7800 250:$11.7100 100:$12.8500 50:$13.0100 25:$14.2400 10:$15.6300 1:$17.3600
IXA45IF1200HB DISTI # 1829724	IXYS Corporation	IGBT,1200V,74A,TO-247 RoHS: Compliant	0	100:£6.6400 50:£6.7200 10:£7.2200 5:£8.9700 1:£9.5200