2N5686G

Mfr. #:: 2N5686G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 50A 80V 300W NPN
生命週期:: 製造商新產品
數據表:: 2N5686G 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2N5686G Datasheet 2N5686G Datasheet (P4-P5)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-204-2

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 80 V

集電極-基極電壓 VCBO：: 80 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 1 V

最大直流集電極電流：: 50 A

增益帶寬積 fT：: 2 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

系列：: 2N5686

高度：: 8.51 mm

長度：: 38.86 mm

打包：: 托盤

寬度：: 26.67 mm

品牌：: 安森美半導體

連續集電極電流：: 50 A

DC 集電極/基極增益 hfe 最小值：: 15

Pd - 功耗：: 300 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 100

子類別：: 晶體管

單位重量：: 0.488015 oz

Tags: 2N568, 2N56, 2N5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2N5686G 描述

***roFlash: Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5

***emi: 50 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray

***r Electronics: Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

***ure Electronics: 2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204

***el Electronic: ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE

***nell: TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor

***roFlash: Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5

***emi: 60 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***enic: 80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS

***ark: BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

***nell: TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V

***ical: Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray

***r Electronics: Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: 2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA

***emi: High Power NPN Bipolar Power Transistor

***ark: Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes

***(Formerly Allied Electronics): Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)

***emi: 25 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray

***r Electronics: Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: 2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA

***ment14 APAC: Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC

***nell: TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V

Market price

型號	製造商	描述	庫存	價格
2N5686G DISTI # V99:2348_07290247	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	100	1000:$7.2220 500:$8.0230 200:$9.1660 100:$9.5820
2N5686G DISTI # V36:1790_07290247	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	85	1000:$7.2220 500:$8.0230 200:$9.1660 100:$9.5820
2N5686G DISTI # 2N5686GOS-ND	ON Semiconductor	TRANS NPN 80V 50A TO3 RoHS: Compliant Min Qty: 1 Container: Tray	304In Stock	500:$9.5369 100:$10.7208 10:$12.6940 1:$13.8100
2N5686G DISTI # 31062962	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	100	1:$9.5820
2N5686G DISTI # 30223364	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	85	85:$9.5820
2N5686G DISTI # 2N5686G	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G) RoHS: Compliant Min Qty: 100 Container: Tray	Americas - 85	100:$8.0900 200:$8.0900 400:$7.9900 600:$7.8900 1000:$7.6900
2N5686G DISTI # 2N5686G	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1:€10.7755 10:€9.9130 100:€8.3720
2N5686G DISTI # 26K5299	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$13.1500 10:$12.1000 25:$11.5900 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
2N5686G DISTI # 26K5299	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes	172	1:$11.1800 10:$10.2900 25:$9.8600 50:$9.2800 100:$8.6900 250:$8.2600 500:$7.7300
2N5686G. DISTI # 30AC3786	ON Semiconductor	BIP T03 NPN 50A 80V , ROHS COMPLIANT: YES	85	1:$13.4100 10:$12.3400 25:$11.8200 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
2N5686G DISTI # 70099763	ON Semiconductor	Transistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5 RoHS: Compliant	0	1:$13.0900 100:$12.4400 250:$11.8100
2N5686G	ON Semiconductor	RoHS: Not Compliant	3067	1000:$10.2400 500:$10.7700 100:$11.2200 25:$11.7000 1:$12.6000
2N5686G DISTI # 863-2N5686G	ON Semiconductor	Bipolar Transistors - BJT 50A 80V 300W NPN RoHS: Compliant	187	1:$13.1500 10:$12.1000 20:$11.5900 100:$10.2200 200:$9.7100 500:$9.0900
2N5686 DISTI # 863-2N5686	ON Semiconductor	Bipolar Transistors - BJT 50A 80V 300W NPN RoHS: Not compliant	0
2N5686G DISTI # 8624893	ON Semiconductor	BJT NPN 50A 80V TO-204-2, EA	228	1:£9.7000
2N5686G DISTI # 2630288	ON Semiconductor	TRANS, BIPOL, NPN, 80V, TO-204AA RoHS: Compliant	253	1:$20.8200 10:$19.1500 20:$18.3500 100:$16.1700 200:$15.3700 500:$14.3900 1000:$13.2000
2N5686G DISTI # 2630288	ON Semiconductor	TRANS, BIPOL, NPN, 80V, TO-204AA RoHS: Compliant	262	1:£10.5600 5:£10.0500 10:£8.8600 50:£8.1400 100:£7.4100

相關產品

圖片	型號	描述
	Mfr.#: 2N5684G OMO.#: OMO-2N5684G	Bipolar Transistors - BJT 50A 80V 300W PNP
	Mfr.#: 1N4750A OMO.#: OMO-1N4750A	Zener Diodes 27V 1W ZENER 5%
	Mfr.#: CD74HC74E OMO.#: OMO-CD74HC74E	Flip Flops Dual
	Mfr.#: CD74HC27E OMO.#: OMO-CD74HC27E	Logic Gates HS Triple 3-Input
	Mfr.#: D53018 OMO.#: OMO-D53018	D-Sub Tools & Hardware Lock Post
	Mfr.#: LF347N OMO.#: OMO-LF347N	Operational Amplifiers - Op Amps Quad Wideband JFET
	Mfr.#: 2TL1-3D OMO.#: OMO-2TL1-3D	Toggle Switches DPDT ON-ON Screw Term
	Mfr.#: W31-X2M1G-10 OMO.#: OMO-W31-X2M1G-10	Circuit Breakers 10A TOGGLE ACTUATOR
	Mfr.#: 1N4750A OMO.#: OMO-1N4750A-ON-SEMICONDUCTOR	DIODE ZENER 27V 1W DO41
	Mfr.#: LF347N OMO.#: OMO-LF347N-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Op Amp