MRF7P20040HSR3

Mfr. #:: MRF7P20040HSR3
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
生命週期:: 製造商新產品
數據表:: MRF7P20040HSR3 數據表
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產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Id - 連續漏極電流：: 150 mA

Vds - 漏源擊穿電壓：: 65 V

獲得：: 18.2 dB

輸出功率：: 10 W

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-780S-4

打包：: 捲軸

配置：: 單身的

高度：: 4.32 mm

長度：: 20.7 mm

工作頻率：: 1.8 GHz to 2.2 GHz

系列：: MRF7P20040H

類型：: 射頻功率MOSFET

寬度：: 9.91 mm

品牌：: 恩智浦/飛思卡爾

頻道模式：: 增強

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 250

子類別：: MOSFET

Vgs - 柵源電壓：: 10 V

Vgs th - 柵源閾值電壓：: 2.7 V

第 # 部分別名：: 935310091128

單位重量：: 0.228180 oz

Tags: MRF7P20040HS, MRF7P, MRF7, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF7P20040HSR3 描述

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V

***et: Power LDMOS Transistor N-Channel 65V 5-Pin NI-780S T/R

***ical: Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R

*** Electronic Components: RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4

***i-Key: FET RF 2CH 65V 2.03GHZ NI780HS-4

***i-Key Marketplace: RF 2-ELEMENT, S BAND, N-CHANNEL

*** Source Electronics: Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523

***ure Electronics: DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523

***nell: MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted

***et: Transistor MOSFET Array Dual P-CH 50V 160mA 6-Pin SOT-563 T/R

***p One Stop: Trans MOSFET P-CH 50V 0.16A Automotive 6-Pin SOT-563 T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 50V VDS, 8±V VGS

***(Formerly Allied Electronics): MOSFET Dual P-Ch 50V 160mA Enhanc.SOT563

***ment14 APAC: MOSFET, DUAL, P-CH, 50V, 0.16A;

***ark: Mosfet Bvdss: 41V~60V Sot563 T&r 3K

***ical: N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R

***ure Electronics: DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363

***ark: Transistor, Npn/n-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 50V, 0.16A

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V

***W: RF Power Transistor,100 to 3600 MHz, 16.2 W, Typ Gain in dB is 17.6 @ 2170 MHz, 28 V, LDMOS, SOT1732

***et: Transistor RF FET N-CH 65V 1805MHz to 2700MHz 2-Pin TO-270 T/R

*** Electronic Components: RF MOSFET Transistors AF 1.8-2.7G 15W TO270-2

***p One Stop Global: Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R

***ark: P CH MOSFET, -60V, 190mA, SC-75A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No

***nell: MOSFET, P CH, -60V, -0.19A, SOT-416; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-416; No. of Pins:3; MSL:-

***(Formerly Allied Electronics): MOSFET,P-Ch,VDSS -60V,RDS(ON) 10 Ohms,ID -185mA,TO-236 (SOT-23),PD 350mW,-55degc

***enic: 60V 185mA 6´Î@10V500mA 350mW 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***th Star Micro: Transistor MOSFET P-CH 60V 0.185A 3-Pin TO-236 T/R

***roFlash: Small Signal Field-Effect Transistor, 0.185A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ment14 APAC: P CH MOSFET, -60V, 185mA, TO-236; Transi; P CH MOSFET, -60V, 185mA, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-185mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3

Market price

型號	製造商	描述	庫存	價格
MRF7P20040HSR3 DISTI # MRF7P20040HSR3-ND	NXP Semiconductors	FET RF 2CH 65V 2.03GHZ NI780HS-4 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF7P20040HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	20665	1000:$47.7900 500:$50.3100 100:$52.3800 25:$54.6200 1:$58.8200
MRF7P20040HSR3 DISTI # 841-MRF7P20040HSR3	NXP Semiconductors	RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4 RoHS: Compliant	0
MRF7P20040HSR3 DISTI # MRF7P20040HSR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0

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