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FDMC7570S

FDMC7570S
Mfr. #:
FDMC7570S
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
生命週期:
製造商新產品
數據表:
FDMC7570S 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMC7570S 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-33-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
25 V
Id - 連續漏極電流：
40 A
Rds On - 漏源電阻：
2 mOhms
Vgs th - 柵源閾值電壓：
1.7 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
59 W
配置：
單身的
商品名：
同步場效應晶體管
打包：
捲軸
高度：
0.8 mm
長度：
3.3 mm
系列：
FDMC7570S
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
154 S
秋季時間：
4.5 ns
產品類別：
MOSFET
上升時間：
6.8 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
34 ns
典型的開啟延遲時間：
14 ns
單位重量：
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R
***ment14 APAC
N CH MOSFET, 25V, 34A, 8-PWR56; Transist; N CH MOSFET, 25V, 34A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
型號 製造商 描述 庫存 價格
FDMC7570S
DISTI # V72:2272_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 1000:$1.5680
  • 500:$1.7650
  • 250:$1.9130
  • 100:$2.0120
  • 25:$2.0860
  • 10:$2.3180
  • 1:$2.9931
FDMC7570S
DISTI # V36:1790_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R0
  • 3000000:$1.2090
  • 1500000:$1.2100
  • 300000:$1.2420
  • 30000:$1.2840
  • 3000:$1.2900
FDMC7570S
DISTI # FDMC7570SCT-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570SDKR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570STR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.3945
  • 3000:$1.4490
FDMC7570S
DISTI # 33954806		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R300000
  • 3000:$0.3375
FDMC7570S
DISTI # 32336673		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 5:$2.9931
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.2900
  • 18000:€1.3900
  • 12000:€1.4900
  • 6000:€1.7900
  • 3000:€2.1900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Bulk (Alt: FDMC7570S)
Min Qty: 218
Container: Bulk		Americas - 0
  • 436:$1.3900
  • 654:$1.3900
  • 1090:$1.3900
  • 2180:$1.3900
  • 218:$1.4900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$1.7010
  • 75000:$1.7293
  • 30000:$1.7890
  • 15000:$1.8529
  • 9000:$1.9215
  • 6000:$1.9954
  • 3000:$2.0752
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
FDMC7570S
DISTI # 92R5533		ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0016 ohm, 10 V, 1.7 V0
  • 1:$1.3300
FDMC7570S
DISTI # 512-FDMC7570S		ON SemiconductorMOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
RoHS: Compliant		4253
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 1000:$1.4500
  • 3000:$1.3800
  • 6000:$1.3200
FDMC7570SFairchild Semiconductor CorporationPower Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
RoHS: Compliant		22336
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
圖片 型號 描述
ADS1015IRUGT

Mfr.#: ADS1015IRUGT

OMO.#: OMO-ADS1015IRUGT

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PCA9536DP,118

Mfr.#: PCA9536DP,118

OMO.#: OMO-PCA9536DP-118

 Interface - I/O Expanders I2C/SMBUS 4BIT GPIO
BAT1000-7-F

Mfr.#: BAT1000-7-F

OMO.#: OMO-BAT1000-7-F

 Schottky Diodes & Rectifiers 1.0A 40V
TXB0104PWR

Mfr.#: TXB0104PWR

OMO.#: OMO-TXB0104PWR

 Translation - Voltage Levels 4-Bit Bi-directional V-Level Translator
748421245

Mfr.#: 748421245

OMO.#: OMO-748421245

 Signal Conditioning WE-BAL Chip Balun 50Ohm Size 0805
ADS1015IRUGT

Mfr.#: ADS1015IRUGT

OMO.#: OMO-ADS1015IRUGT-TEXAS-INSTRUMENTS

 Analog to Digital Converters - ADC 12B ADC with Int MUX PGA Comp Osc and Ref
MIC5219-5.0YM5-TR

Mfr.#: MIC5219-5.0YM5-TR

OMO.#: OMO-MIC5219-5-0YM5-TR-MICROCHIP-TECHNOLOGY

 LDO Voltage Regulators
TXB0104PWR

Mfr.#: TXB0104PWR

OMO.#: OMO-TXB0104PWR-TEXAS-INSTRUMENTS

 Translation - Voltage Levels 4-Bit Bi-directional V-Level Translato
XC6201P252MR-G

Mfr.#: XC6201P252MR-G

OMO.#: OMO-XC6201P252MR-G-TOREX-SEMICONDUCTOR

 LDO Voltage Regulators 10V Three Terminals Voltage Regulato
BAT1000-7-F

Mfr.#: BAT1000-7-F

OMO.#: OMO-BAT1000-7-F-DIODES

 DIODE SCHOTTKY 40V 1A SOT23-3
可用性
庫存:
Available
訂購:
1987
輸入數量:
FDMC7570S的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.74
US$2.74
10
US$2.33
US$23.30
100
US$2.02
US$202.00
250
US$1.92
US$480.00
500
US$1.72
US$860.00
1000
US$1.45
US$1 450.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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