IPW60R160P6FKSA1

Mfr. #:: IPW60R160P6FKSA1
製造商:: Infineon Technologies
描述:: MOSFET HIGH POWER_LEGACY
生命週期:: 製造商新產品
數據表:: IPW60R160P6FKSA1 數據表
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產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-247-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 23.8 A

Rds On - 漏源電阻：: 144 mOhms

Vgs th - 柵源閾值電壓：: 3.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 44 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 176 W

配置：: 單身的

頻道模式：: 增強

商品名：: 酷摩

打包：: 管子

高度：: 21.1 mm

長度：: 16.13 mm

系列：: CoolMOS P6

晶體管類型：: 1 N-Channel

寬度：: 5.21 mm

品牌：: 英飛凌科技

秋季時間：: 5.8 ns

產品類別：: MOSFET

上升時間：: 7.6 ns

出廠包裝數量：: 240

子類別：: MOSFET

典型關斷延遲時間：: 40 ns

典型的開啟延遲時間：: 12.5 ns

第 # 部分別名：: IPW60R160P6 SP001017092

單位重量：: 1.340411 oz

Tags: IPW60R160, IPW60R16, IPW60R1, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R160P6FKSA1 描述

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-247-3

***ical: Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 600V TO247-3

***ark: Mosfet, N-Ch, 600V, 23.8A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 23.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:176W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 23,8A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23.8A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.144ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:176W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

IPW60R160P6FKSA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型號	製造商	描述	庫存	價格
IPW60R160P6FKSA1 DISTI # V99:2348_06378559	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube	236	500:$2.2450 250:$2.4280 100:$2.6300 10:$3.0350 1:$3.9226
IPW60R160P6FKSA1 DISTI # V36:1790_06378559	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.5800 120000:$1.5830 24000:$1.8830 2400:$2.4280 240:$2.5200
IPW60R160P6FKSA1 DISTI # IPW60R160P6FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	128In Stock	5040:$1.8231 2640:$1.8943 720:$2.3644 240:$2.7774 25:$3.2048 10:$3.3900 1:$3.7700
IPW60R160P6FKSA1 DISTI # 26566807	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube	236	4:$3.9226
IPW60R160P6FKSA1 DISTI # SP001017092	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube (Alt: SP001017092) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1980	1000:€1.4900 100:€1.5900 500:€1.5900 50:€1.6900 10:€1.7900 25:€1.7900 1:€1.9900
IPW60R160P6FKSA1 DISTI # IPW60R160P6FKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW60R160P6FKSA1) RoHS: Compliant Min Qty: 202 Container: Bulk	Americas - 0
IPW60R160P6FKSA1 DISTI # IPW60R160P6FKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R160P6FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.6900 2400:$1.6900 480:$1.7900 960:$1.7900 240:$1.8900
IPW60R160P6FKSA1 DISTI # IPW60R160P6	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube (Alt: IPW60R160P6) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0	12000:$1.7171 6000:$1.7391 2400:$1.7617 1200:$1.7849 720:$1.8331 480:$1.8840 240:$1.9379
IPW60R160P6FKSA1 DISTI # 12AC9737	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:23.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	11	500:$2.2700 250:$2.5400 100:$2.6700 50:$2.8000 25:$2.9400 10:$3.0800 1:$3.6300
IPW60R160P6 DISTI # 726-IPW60R160P6	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	218	1:$3.5900 10:$3.0500 100:$2.6400 250:$2.5100 500:$2.2500
IPW60R160P6FKSA1 DISTI # 726-IPW60R160P6FKSA1	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY RoHS: Compliant	240	1:$3.5900 10:$3.0500 100:$2.6400 250:$2.5100 500:$2.2500
IPW60R160P6FKSA1 DISTI # 2709935	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-247 RoHS: Compliant	11	2640:$2.8700 720:$3.5700 240:$4.1900 25:$4.8300 10:$5.1100 1:$5.6800
IPW60R160P6FKSA1 DISTI # 2709935	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-247	64	500:£1.5700 250:£1.7500 100:£1.9400 10:£2.3500 1:£2.9500

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