IRF7907TRPBF

IRF7907TRPBF
Mfr. #:
IRF7907TRPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT DUAL NCh 30V 9.1A
生命週期:
製造商新產品
數據表:
IRF7907TRPBF 數據表
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HTML Datasheet:
IRF7907TRPBF DatasheetIRF7907TRPBF Datasheet (P4-P6)IRF7907TRPBF Datasheet (P7-P9)IRF7907TRPBF Datasheet (P10)
ECAD Model:
更多信息:
IRF7907TRPBF 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
通道數:
2 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
9.1 A, 11 A
Rds On - 漏源電阻:
17.1 mOhms, 11.5 mOhms
Vgs th - 柵源閾值電壓:
1.8 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
6.7 nC, 14 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
2.0 W
配置:
雙重的
打包:
捲軸
高度:
1.75 mm
長度:
4.9 mm
晶體管類型:
2 N-Channel
寬度:
3.9 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
19 S, 24 S
秋季時間:
3.4 ns, 5.3 ns
產品類別:
MOSFET
上升時間:
9.3 ns, 14 ns
出廠包裝數量:
4000
子類別:
MOSFET
典型關斷延遲時間:
8 ns, 13 ns
典型的開啟延遲時間:
6 ns, 8 ns
第 # 部分別名:
SP001566462
單位重量:
0.017870 oz
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***nell
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRF7907TRPBF
DISTI # V72:2272_13890551
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
698
  • 500:$0.4503
  • 250:$0.5002
  • 100:$0.5057
  • 25:$0.6207
  • 10:$0.6280
  • 1:$0.7124
IRF7907TRPBF
DISTI # IRF7907TRPBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3851In Stock
  • 1000:$0.4844
  • 500:$0.6135
  • 100:$0.7911
  • 10:$1.0010
  • 1:$1.1300
IRF7907TRPBF
DISTI # IRF7907TRPBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3851In Stock
  • 1000:$0.4844
  • 500:$0.6135
  • 100:$0.7911
  • 10:$1.0010
  • 1:$1.1300
IRF7907TRPBF
DISTI # IRF7907TRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.4389
IRF7907TRPBF
DISTI # 30701890
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.4925
IRF7907TRPBF
DISTI # 30606325
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
3900
  • 200:$0.5725
  • 100:$0.6069
  • 50:$0.6847
  • 21:$1.0072
IRF7907TRPBF
DISTI # 26196291
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
698
  • 500:$0.4503
  • 250:$0.5002
  • 100:$0.5057
  • 25:$0.6207
  • 22:$0.6280
IRF7907TRPBF
DISTI # IRF7907TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R (Alt: IRF7907TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
  • 4000:$0.4616
  • 8000:$0.4487
  • 12000:$0.4366
  • 20000:$0.4251
  • 40000:$0.4196
  • 100000:$0.4142
  • 200000:$0.4090
IRF7907TRPBF
DISTI # IRF7907TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7907TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.3279
  • 8000:$0.3159
  • 16000:$0.3049
  • 24000:$0.2939
  • 40000:$0.2889
IRF7907TRPBF
DISTI # 13AC9211
Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes0
  • 1:$1.0000
  • 10:$0.8650
  • 25:$0.8040
  • 50:$0.7430
  • 100:$0.6820
  • 250:$0.6480
  • 500:$0.6120
  • 1000:$0.5000
IRF7907TRPBF
DISTI # 70018978
Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,9.1A,SO-8
RoHS: Compliant
0
  • 4000:$1.1200
IRF7907TRPBFInternational Rectifier 
RoHS: Not Compliant
4000
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
IRF7907TRPBF
DISTI # 942-IRF7907TRPBF
Infineon Technologies AGMOSFET MOSFT DUAL NCh 30V 9.1A
RoHS: Compliant
13922
  • 1:$0.9400
  • 10:$0.7980
  • 100:$0.6130
  • 500:$0.5420
  • 1000:$0.4280
IRF7907TRPBF
DISTI # 1300964P
Infineon Technologies AGMOSFET HEXFET DUAL N-CH 30V 9A/11A SOIC8, RL5710
  • 50:£0.4850
  • 500:£0.3920
  • 1000:£0.3390
  • 2500:£0.3040
IRF7907TRPBF
DISTI # 2725920
Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8
RoHS: Compliant
0
  • 5:£0.6150
  • 25:£0.5440
  • 100:£0.4730
  • 250:£0.4460
  • 500:£0.4180
IRF7907TRPBF
DISTI # 2725920
Infineon Technologies AGMOSFET, DUAL N CH, 30V, 11A, SOIC-8
RoHS: Compliant
0
  • 1:$1.5000
  • 10:$1.2600
  • 100:$0.9710
  • 500:$0.8580
  • 1000:$0.6800
IRF7907TRPBF
DISTI # C1S322000486801
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
3900
  • 500:$0.4210
  • 200:$0.4490
  • 100:$0.4760
  • 50:$0.5370
  • 10:$0.7900
  • 5:$0.9740
IRF7907TRPBF
DISTI # C1S322000486795
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
698
  • 250:$0.5167
  • 100:$0.5182
  • 25:$0.6304
  • 10:$0.6331
IRF7907TRPBF
DISTI # C1S322000570207
Infineon Technologies AGTrans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.4430
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可用性
庫存:
12
訂購:
1995
輸入數量:
IRF7907TRPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.93
US$0.93
10
US$0.80
US$7.98
100
US$0.61
US$61.30
500
US$0.54
US$271.00
1000
US$0.43
US$428.00
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