SCTWA50N120

SCTWA50N120
Mfr. #:
SCTWA50N120
製造商:
STMicroelectronics
描述:
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
生命週期:
製造商新產品
數據表:
SCTWA50N120 數據表
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ECAD Model:
更多信息:
SCTWA50N120 更多信息 SCTWA50N120 Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
MOSFET
RoHS:
Y
技術:
碳化矽
安裝方式:
通孔
包裝/案例:
HiP-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
1.2 kV
Id - 連續漏極電流:
65 A
Rds On - 漏源電阻:
52 mOhms
Vgs th - 柵源閾值電壓:
1.8 V
Vgs - 柵源電壓:
25 V
Qg - 門電荷:
122 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 200 C
Pd - 功耗:
318 W
配置:
單身的
頻道模式:
增強
商品名:
HiP247â?¢
系列:
SCTWA50N120
晶體管類型:
1 N-Channel
品牌:
意法半導體
產品類別:
MOSFET
出廠包裝數量:
600
子類別:
MOSFET
Tags
SCTWA, SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3)
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
***ical
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
***icroelectronics SCT
SiC MOSFETs, 1200V ,65A, 69mΩ, HIP247 long leads
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
型號 製造商 描述 庫存 價格
SCTWA50N120
DISTI # 33792122
STMicroelectronicsSilicon Carbide Power MOSFET600
  • 1:$25.0832
SCTWA50N120
DISTI # 497-18637-ND
STMicroelectronicsMOSFET N-CH 1200V 65A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube
600In Stock
  • 100:$27.8160
  • 10:$32.5740
  • 1:$35.3200
SCTWA50N120
DISTI # V99:2348_17697480
STMicroelectronicsSilicon Carbide Power MOSFET0
    SCTWA50N120
    DISTI # V36:1790_17051738
    STMicroelectronicsSilicon Carbide Power MOSFET0
    • 600000:$22.1800
    • 300000:$22.1900
    • 60000:$24.1700
    • 6000:$28.9200
    • 600:$29.7900
    SCTWA50N120
    DISTI # SCTWA50N120
    STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Asia - 0
      SCTWA50N120
      DISTI # SCTWA50N120
      STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      Europe - 0
      • 1000:€22.1900
      • 500:€23.7900
      • 100:€24.6900
      • 50:€25.5900
      • 25:€26.5900
      • 10:€27.6900
      • 1:€30.2900
      SCTWA50N120
      DISTI # SCTWA50N120
      STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 600
      Container: Tube
      Americas - 0
      • 6000:$23.2900
      • 3600:$23.7900
      • 2400:$24.8900
      • 1200:$26.0900
      • 600:$27.3900
      SCTWA50N120
      DISTI # 20AC3771
      STMicroelectronicsPTD WBG & POWER RF0
      • 1:$22.8800
      SCTWA50N120
      DISTI # 511-SCTWA50N120
      STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
      RoHS: Compliant
      0
      • 1:$35.3100
      • 5:$34.9500
      • 10:$32.5700
      • 25:$31.1100
      • 100:$27.8100
      • 250:$26.5300
      圖片 型號 描述
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120

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      OMO.#: OMO-SCTWA30N120

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      MOSFET
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      Mfr.#: SCTWA10N120

      OMO.#: OMO-SCTWA10N120-STMICROELECTRONICS

      IC POWER MOSFET 1200V HIP247
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      Mfr.#: SCTWA20N120

      OMO.#: OMO-SCTWA20N120-STMICROELECTRONICS

      IC POWER MOSFET 1200V HIP247
      SCTWA30N120

      Mfr.#: SCTWA30N120

      OMO.#: OMO-SCTWA30N120-STMICROELECTRONICS

      IC POWER MOSFET 1200V HIP247
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120-STMICROELECTRONICS

      MOSFET N-CH 1200V 65A HIP247
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      SCTWA50N120的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$35.31
      US$35.31
      5
      US$34.95
      US$174.75
      10
      US$32.57
      US$325.70
      25
      US$31.11
      US$777.75
      100
      US$27.81
      US$2 781.00
      250
      US$26.53
      US$6 632.50
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