AS4C16M16D1A-5TAN

Mfr. #:: AS4C16M16D1A-5TAN
製造商:: Alliance Memory
描述:: DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
生命週期:: 製造商新產品
數據表:: AS4C16M16D1A-5TAN 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: AS4C16M16D1A-5TAN 更多信息

產品屬性
屬性值

製造商：: 聯盟記憶

產品分類：: 動態隨機存取存儲器

RoHS：: Y

系列：: AS4C16M16D1A

打包：: 托盤

品牌：: 聯盟記憶

濕氣敏感：: 是的

產品類別：: 動態隨機存取存儲器

出廠包裝數量：: 108

子類別：: 內存和數據存儲

Tags: AS4C16M16D1A, AS4C16M16D1, AS4C16M16D, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C16M16D1A-5TAN 評級和評論

G***v

Shipping 1.5 months

2019-06-14

G***v

Packed well, nothing confused. The seller and the goods are satisfied!

2019-05-18

AS4C16M16D1A-5TAN 更多信息

DDR1 Synchronous DRAM: Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

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