BSM35GB120DN2

Mfr. #:: BSM35GB120DN2
製造商:: Infineon Technologies
描述:: IGBT Modules 1200V 35A DUAL
生命週期:: 製造商新產品
數據表:: BSM35GB120DN2 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: N

產品：: IGBT 矽模塊

配置：: 半橋

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 3.2 V

25 C 時的連續集電極電流：: 50 A

柵極-發射極漏電流：: 150 nA

Pd - 功耗：: 280 W

包裝/案例：: Half Bridge1

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

打包：: 托盤

高度：: 30.5 mm

長度：: 94 mm

寬度：: 34 mm

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 10

子類別：: IGBT

第 # 部分別名：: BSM35GB120DN2HOSA1 SP000100461

Tags: BSM35GB120DN, BSM35GB, BSM35, BSM3, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM35GB120DN2 描述

***omponent: IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area

***ser: IGBT - Standard Modules 1200V 35A DUAL

Market price

型號	製造商	描述	庫存	價格
BSM35GB120DN2HOSA1 DISTI # BSM35GB120DN2HOSA1-ND	Infineon Technologies AG	IGBT 2 MED POWER 34MM-1 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$63.2560
BSM 35 GB 120 DN2 DISTI # SP000100461	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A 7-Pin 34mm (Alt: SP000100461) RoHS: Compliant Min Qty: 1	Europe - 0	1:€75.2900 10:€60.8900 25:€55.2900 50:€53.4900 100:€51.6900 500:€50.1900 1000:€49.0900
BSM35GB120DN2HOSA1 DISTI # BSM35GB120DN2HOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 35A nom - Trays (Alt: BSM35GB120DN2HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$54.6900 20:$53.9900 40:$52.5900 60:$51.2900 100:$50.0900
BSM35GB120DN2HOSA1 DISTI # BSM35GB120DN2HOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 35A nom - Bulk (Alt: BSM35GB120DN2HOSA1) Min Qty: 7 Container: Bulk	Americas - 0	8:$55.8900 10:$53.8900 18:$51.8900 40:$50.1900 80:$49.2900
BSM35GB120DN2 DISTI # 641-BSM35GB120DN2	Infineon Technologies AG	IGBT Modules 1200V 35A DUAL RoHS: Not compliant	0
BSM35GB120DN2HOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	1	1000:$51.1100 500:$53.8000 100:$56.0100 25:$58.4100 1:$62.9000

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