FDD5810

Mfr. #:: FDD5810
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET LOW VOLTAGE
生命週期:: 製造商新產品
數據表:: FDD5810 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 35 A

Rds On - 漏源電阻：: 16.5 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 88 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 2.39 mm

長度：: 6.73 mm

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 34 ns

產品類別：: MOSFET

上升時間：: 75 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 26 ns

典型的開啟延遲時間：: 12 ns

單位重量：: 0.139332 oz

Tags: FDD58, FDD5, FDD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD5810 描述

***Yang: TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK - Bulk

***i-Key Marketplace: MOSFET N-CH 60V 7.4A/37A DPAK

***ser: MOSFETs LOW_VOLTAGE

***el Nordic: Contact for details

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:7.4A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):43mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:72W ;RoHS Compliant: Yes

***emi: N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ

***ark: TAPE REEL / TO-252AA, N-CH ULTRAFET TRENCH MOSFET 60V, 46A, 20MOHM

***ical: Trans MOSFET N-CH 60V 45A 3-Pin (2+Tab) TO-252 T/R

***Yang: MOSFET N-CH 60V 8A/45A TO252AA

***icroelectronics: N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 60V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 35A DPAK

***ure Electronics: STD30NF06L Series N-Channel 60 V 0.028 Ohm STripFET POWER MosFet - TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:2.5V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:70W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:30A; Package / Case:DPAK; Power Dissipation Pd:70W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 35 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 70

***icroelectronics: N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package

***ark: MOSFET, N CHANNEL, 60V, 35A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 60V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 17.6 Milliohms;ID 42A;D-Pak (TO-252AA);-55de

***ure Electronics: Single N-Channel 75 V 22 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: Mosfet, Ips, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ure Electronics: Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS Power Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:60V; On Resistance

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, TO-252-3, RoHS

***nell: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 35 mOhm 10 nC OptiMOS Power Mosfet - TO-252-3

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 29A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

型號	製造商	描述	庫存	價格
FDD5810_F085 DISTI # V36:1790_06337845	ON Semiconductor	60V, 35A, 27 OHM, NCH, POWER T	5000	2500:$0.3963
FDD5810-F085 DISTI # FDD5810-F085CT-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4853In Stock	1000:$0.4843 500:$0.6134 100:$0.7425 10:$0.9520 1:$1.0700
FDD5810-F085 DISTI # FDD5810-F085DKR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4853In Stock	1000:$0.4843 500:$0.6134 100:$0.7425 10:$0.9520 1:$1.0700
FDD5810-F085 DISTI # FDD5810-F085TR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3970 12500:$0.4012 5000:$0.4169 2500:$0.4388
FDD5810 DISTI # FDD5810TR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDD5810 DISTI # FDD5810CT-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDD5810 DISTI # FDD5810DKR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDD5810_F085 DISTI # 33369254	ON Semiconductor	60V, 35A, 27 OHM, NCH, POWER T	5000	2500:$0.3963
FDD5810 DISTI # FDD5810	ON Semiconductor	TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK - Bulk (Alt: FDD5810) RoHS: Compliant Min Qty: 404 Container: Bulk	Americas - 0	4040:$0.7649 2020:$0.7839 1212:$0.7939 808:$0.8049 404:$0.8099
FDD5810_F085 DISTI # FDD5810-F085	ON Semiconductor	Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD5810-F085) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3679 15000:$0.3769 10000:$0.3819 5000:$0.3869 2500:$0.3899
FDD5810_F085 DISTI # FDD5810-F085	ON Semiconductor	Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: FDD5810-F085) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3699 15000:€0.3989 10000:€0.4319 5000:€0.4719 2500:€0.5759
FDD5810-F085 DISTI # 07AH3897	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	0	1000:$0.4520 500:$0.5740 250:$0.6110 100:$0.6480 50:$0.7140 25:$0.7790 10:$0.8440 1:$0.9900
FDD5810-F085 DISTI # 48AC0935	ON Semiconductor	NMOS DPAK 60V 22 MOHM / REEL	0	1000:$0.5850 500:$0.6320 250:$0.6980 100:$0.7700 1:$0.9880
FDD5810 DISTI # 512-FDD5810	ON Semiconductor	MOSFET LOW VOLTAGE RoHS: Compliant	0
FDD5810-F085 DISTI # 512-FDD5810_F085	ON Semiconductor	MOSFET LOW VOLTAGE RoHS: Compliant	5076	1:$0.9800 10:$0.8360 100:$0.6420 500:$0.5680 1000:$0.4480 2500:$0.3970 10000:$0.3830
FDD5810-F085	ON Semiconductor	RoHS: Not Compliant	1930	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300
FDD5810	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.7A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	540	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000
FDD5810-F085 DISTI # 3003913	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA	2500	500:£0.4250 250:£0.4530 100:£0.4810 10:£0.6780 1:£0.8370
FDD5810-F085 DISTI # 3003913	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA RoHS: Compliant	0	1000:$0.6060 500:$0.6700 250:$0.7330 100:$0.8130 10:$1.1500 1:$1.3100

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