IPB037N06N3 G

Mfr. #:: IPB037N06N3 G
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
生命週期:: 製造商新產品
數據表:: IPB037N06N3 G 數據表
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更多信息:: IPB037N06N3 G 更多信息

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

系列: OptiMOS 3

打包: 捲軸

部分別名: IPB037N06N3GATMA1 IPB037N06N3GXT SP000397986

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 188 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 5 ns

上升時間: 70 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 90 A

Vds-漏-源-擊穿電壓: 60 V

Rds-On-Drain-Source-Resistance: 3.7 mOhms

晶體管極性: N通道

典型關斷延遲時間: 40 ns

典型開啟延遲時間: 30 ns

通道模式: 增強

Tags: IPB037N06N3G, IPB037, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB037N06N3 G 更多信息

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$0.8174
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3G DISTI # IPB037N06N3 G	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: IPB037N06N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB037N06N3G DISTI # SP000397986	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.9849 2000:€0.7679 4000:€0.6859 6000:€0.6239 10000:€0.5849
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB037N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.7279 2000:$0.7269 4000:$0.7249 6000:$0.7229 10000:$0.7209
IPB037N06N3GATMA1 DISTI # 60R2653	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970
IPB037N06N3 G DISTI # 726-IPB037N06N3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	20	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # 726-IPB037N06N3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,90A,188W,PG-TO263-3	996	1:$1.2370 3:$1.0655 10:$0.8559 100:$0.7432 1000:$0.6920
IPB037N06N3GATMA1 DISTI # XSFP00000156742	Infineon Technologies AG	RoHS: Compliant	3365	1000:$0.9200 3365:$0.8625
IPB037N06N3GATMA1 DISTI # XSKDRABV0021205	Infineon Technologies AG	RoHS: Compliant	4320	1000:$1.1900 4320:$1.0900
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	2	1:£1.2900 10:£1.0200 100:£0.7690 250:£0.7190 500:£0.6690
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	0	1:$2.4000 10:$2.0400 100:$1.6300 500:$1.4200 1000:$1.1800

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圖片	型號	描述
	Mfr.#: IPB037N06N3GATMA1 OMO.#: OMO-IPB037N06N3GATMA1	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB037N06N3 G OMO.#: OMO-IPB037N06N3-G	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB037N06N3GATMA1 OMO.#: OMO-IPB037N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 90A TO263-3
	Mfr.#: IPB037N06N3 OMO.#: OMO-IPB037N06N3-1190	全新原裝
	Mfr.#: IPB037N06N3G OMO.#: OMO-IPB037N06N3G-1190	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)
	Mfr.#: IPB037N06N3 G OMO.#: OMO-IPB037N06N3-G-124	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3