FCPF11N60T

Mfr. #:: FCPF11N60T
製造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 11A TO-220F
生命週期:: 製造商新產品
數據表:: FCPF11N60T 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 金融服務中心

產品分類: FET - 單

打包: 管子

單位重量: 0.080072 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 36 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 56 ns

上升時間: 98 ns

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 11 A

Vds-漏-源-擊穿電壓: 600 V

Rds-On-Drain-Source-Resistance: 320 mOhms

晶體管極性: N通道

典型關斷延遲時間: 119 ns

典型開啟延遲時間: 34 ns

正向跨導最小值: 9.7 S

通道模式: 增強

Tags: FCPF11N60, FCPF11, FCPF1, FCPF, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCPF11N60T 描述

***Semiconductor: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail

***i-Key: MOSFET N-CH 600V 11A TO-220F

***inecomponents.com: 600V N-Channel SuperFET

***eco: TO220F,SUPERFET <AZ

***ser: MOSFETs SUPERFET

***ark: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

型號	製造商	描述	庫存	價格
FCPF11N60T DISTI # FCPF11N60T-ND	ON Semiconductor	MOSFET N-CH 600V 11A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call	1000:$1.4025
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 275 Container: Bulk	Americas - 0	275:$1.0900 550:$1.0900 825:$1.0900 1375:$1.0900 2750:$1.0900
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.0129 500:€1.0499 100:€1.0909 50:€1.1349 25:€1.1819 10:€1.2889 1:€1.4179
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.9429 6000:$0.9669 4000:$0.9799 2000:$0.9919 1000:$0.9989
FCPF11N60T DISTI # 86K1312	ON Semiconductor	SF1 600V 380MOHM E TO220F / TUBE	0	5000:$1.2200 2500:$1.2600 1000:$1.5600 500:$1.7400 100:$1.8800 10:$2.3400 1:$2.7500
FCPF11N60T DISTI # 512-FCPF11N60T	ON Semiconductor	MOSFET SUPERFET RoHS: Compliant	971	1:$2.5800 10:$2.1900 100:$1.7500 500:$1.5300 1000:$1.2700 2000:$1.1800 5000:$1.1400
FCPF11N60T	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	547	1000:$1.2000 500:$1.2600 100:$1.3100 25:$1.3700 1:$1.4700

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