IXFR36N60P

IXFR36N60P
Mfr. #:
IXFR36N60P
製造商:
Littelfuse
描述:
Darlington Transistors MOSFET 600V 20A
生命週期:
製造商新產品
數據表:
IXFR36N60P 數據表
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ECAD Model:
更多信息:
IXFR36N60P 更多信息
產品屬性
屬性值
製造商
IXYS
產品分類
FET - 單
系列
IXFR36N60
打包
管子
單位重量
0.186952 oz
安裝方式
貼片/貼片
商品名
超場效應晶體管
包裝盒
TO-247-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
208 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
22 ns
上升時間
25 ns
VGS-柵極-源極-電壓
30 V
Id 連續漏極電流
20 A
Vds-漏-源-擊穿電壓
600 V
Rds-On-Drain-Source-Resistance
200 mOhms
晶體管極性
N通道
典型關斷延遲時間
80 ns
典型開啟延遲時間
30 ns
正向跨導最小值
40 S
通道模式
增強
Tags
IXFR3, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 208 W 102 nC Silicon Through Hole Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
***ark
Mosfet, N, Isoplus247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
型號 製造商 描述 庫存 價格
IXFR36N60P
DISTI # V99:2348_15878423
IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 1000:$6.4719
  • 500:$6.6650
  • 250:$7.2600
  • 100:$7.8930
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # IXFR36N60P-ND
IXYS CorporationMOSFET N-CH 600V 20A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$10.4633
IXFR36N60P
DISTI # 29727953
IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 2:$11.1080
IXFR36N60P
DISTI # 24M3022
IXYS CorporationMOSFET, N, ISOPLUS247,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:208W RoHS Compliant: Yes232
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
IXFR36N60P
DISTI # 747-IXFR36N60P
IXYS CorporationMOSFET 600V 20A
RoHS: Compliant
118
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
  • 1000:$7.2000
IXFR36N60P
DISTI # C1S331700021744
IXYS CorporationTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # 1300099
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
232
  • 1:£11.8900
  • 5:£11.3400
  • 10:£8.5100
  • 50:£7.9000
  • 100:£7.7200
IXFR36N60P
DISTI # 1300099
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
232
  • 1:$21.1000
  • 10:$19.0100
  • 25:$15.8100
  • 50:$14.6800
  • 100:$14.3600
  • 250:$13.1100
  • 500:$11.9500
  • 1000:$11.4000
圖片 型號 描述
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
IXFR30N60P

Mfr.#: IXFR30N60P

OMO.#: OMO-IXFR30N60P

MOSFET 600V 30A
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P

MOSFET 20 Amps 800V 0.29 Rds
IXFR30N110P

Mfr.#: IXFR30N110P

OMO.#: OMO-IXFR30N110P-IXYS-CORPORATION

MOSFET N-CH 1100V 16A ISOPLUS247
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3-IXYS-CORPORATION

MOSFET N-CH 1000V 23A ISOPLUS247
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P-IXYS-CORPORATION

Darlington Transistors MOSFET 20 Amps 800V 0.29 Rds
IXFR36N60P

Mfr.#: IXFR36N60P

OMO.#: OMO-IXFR36N60P-IXYS-CORPORATION

Darlington Transistors MOSFET 600V 20A
IXFR36N50P

Mfr.#: IXFR36N50P

OMO.#: OMO-IXFR36N50P-IXYS-CORPORATION

Darlington Transistors MOSFET 500V 36A
IXFR32N50Q

Mfr.#: IXFR32N50Q

OMO.#: OMO-IXFR32N50Q-IXYS-CORPORATION

MOSFET 30 Amps 500V 0.15 Rds
IXFR32N80Q3

Mfr.#: IXFR32N80Q3

OMO.#: OMO-IXFR32N80Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
可用性
庫存:
Available
訂購:
4500
輸入數量:
IXFR36N60P的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$9.71
US$9.71
10
US$9.22
US$92.22
100
US$8.74
US$873.71
500
US$8.25
US$4 125.85
1000
US$7.77
US$7 766.30
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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