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SIR165DP-T1-GE3

SIR165DP-T1-GE3
Mfr. #:
SIR165DP-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET -30V Vds 20V Vgs PowerPAK SO-8
生命週期:
製造商新產品
數據表:
SIR165DP-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR165DP-T1-GE3 DatasheetSIR165DP-T1-GE3 Datasheet (P4-P6)SIR165DP-T1-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SIR165DP-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SO-8
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
60 A
Rds On - 漏源電阻：
3.8 mOhms
Vgs th - 柵源閾值電壓：
2.3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
92 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
65.8 W
配置：
單身的
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
先生
品牌：
威世 / Siliconix
秋季時間：
18 ns
產品類別：
MOSFET
上升時間：
25 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
45 ns
典型的開啟延遲時間：
20 ns
Tags
SIR16, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
型號 製造商 描述 庫存 價格
SIR165DP-T1-GE3
DISTI # SIR165DP-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.6615
  • 3000:$0.6946
SIR165DP-T1-GE3
DISTI # SIR165DP-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIR165DP-T1-GE3
DISTI # SIR165DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIR165DP-T1-GE3
DISTI # SIR165DP-T1-GE3		Vishay IntertechnologiesP-CHANNEL 30 V (D-S) MOSFET - Tape and Reel (Alt: SIR165DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6049
  • 30000:$0.6219
  • 18000:$0.6399
  • 12000:$0.6669
  • 6000:$0.6869
SIR165DP-T1-GE3
DISTI # SIR165DP-T1-GE3		Vishay IntertechnologiesP-CHANNEL 30 V (D-S) MOSFET (Alt: SIR165DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000		Asia - 0
    SIR165DP-T1-GE3
    DISTI # 81AC3481    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.6000
    • 6000:$0.6150
    • 4000:$0.6380
    • 2000:$0.7090
    • 1000:$0.7800
    • 1:$0.8130
    SIR165DP-T1-GE3
    DISTI # 81AC2789    		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.3V,Power RoHS Compliant: Yes0
    • 500:$0.9070
    • 250:$0.9790
    • 100:$1.0500
    • 50:$1.1600
    • 25:$1.2700
    • 10:$1.3700
    • 1:$1.6700
    SIR165DP-T1-GE3
    DISTI # 78-SIR165DP-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8980
    • 1000:$0.7090
    • 3000:$0.6620
    SIR165DP-T1-GE3
    DISTI # 2932940    		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C
    RoHS: Compliant    		0
    • 1000:$1.0700
    • 500:$1.1200
    • 250:$1.3200
    • 100:$1.6200
    • 10:$2.0500
    • 1:$2.4800
    SIR165DP-T1-GE3
    DISTI # 2932940    		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C0
    • 500:£0.6580
    • 250:£0.7140
    • 100:£0.7700
    • 25:£1.0100
    • 5:£1.1000
    SIR165DP-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
      圖片 型號 描述
      SIR165DP-T1-GE3

      Mfr.#: SIR165DP-T1-GE3

      OMO.#: OMO-SIR165DP-T1-GE3

      		 MOSFET -30V Vds 20V Vgs PowerPAK SO-8
      SIR165DP-T1-GE3

      Mfr.#: SIR165DP-T1-GE3

      OMO.#: OMO-SIR165DP-T1-GE3-VISHAY

      		 MOSFET P-CHAN 30V POWERPAK SO-8
      可用性
      庫存:
      Available
      訂購:
      1989
      輸入數量:
      SIR165DP-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.65
      US$1.65
      10
      US$1.36
      US$13.60
      100
      US$1.04
      US$104.00
      500
      US$0.90
      US$449.00
      1000
      US$0.71
      US$709.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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