IKW30N65EL5XKSA1

Mfr. #:: IKW30N65EL5XKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors 650V IGBT Trenchstop 5
生命週期:: 製造商新產品
數據表:: IKW30N65EL5XKSA1 數據表
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更多信息:: IKW30N65EL5XKSA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 1.05 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 85 A

Pd - 功耗：: 227 W

最低工作溫度：: - 40 C

最高工作溫度：: + 175 C

系列：: TRENCHSTOP 5 L5

打包：: 管子

品牌：: 英飛凌科技

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 240

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: IKW30N65EL5 SP001178080

單位重量：: 1.340411 oz

Tags: IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW30N65EL5XKSA1 描述

***ical: Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding

IKW30N65EL5XKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs: Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.

Market price

型號	製造商	描述	庫存	價格
IKW30N65EL5XKSA1 DISTI # IKW30N65EL5XKSA1IN-ND	Infineon Technologies AG	IGBT 650V 30A FAST DIODE TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	321In Stock	1200:$3.0529 720:$3.6199 240:$4.2523 10:$5.1900 1:$5.7800
IKW30N65EL5XKSA1 DISTI # IKW30N65EL5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65EL5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$2.8900 480:$2.7900 960:$2.6900 1440:$2.5900 2400:$2.5900
IKW30N65EL5XKSA1 DISTI # SP001178080	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001178080) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€2.5900 10:€2.4900 25:€2.4900 50:€2.2900 100:€2.2900 500:€2.2900 1000:€2.1900
IKW30N65EL5XKSA1 DISTI # 12AC9674	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	622	100:$4.8700 50:$5.1000 25:$5.3200 10:$5.5500 1:$6.4400
IKW30N65EL5XKSA1 DISTI # 726-IKW30N65EL5XKSA1	Infineon Technologies AG	IGBT Transistors 650V IGBT Trenchstop 5 RoHS: Compliant	227	1:$5.4900 10:$4.6700 100:$4.0500 250:$3.8400 500:$3.4400
IKW30N65EL5XKSA1 DISTI # 2709886	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247 RoHS: Compliant	622	1200:$4.8400 720:$5.7300 240:$6.7300 10:$8.2200 1:$9.1500
IKW30N65EL5XKSA1 DISTI # 2709886	Infineon Technologies AG	IGBT, SINGLE, 650V, 85A, TO-247 RoHS: Compliant	622	500:£2.6800 250:£3.0000 100:£3.1500 10:£3.6400 1:£4.7300

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