IPI029N06NAKSA1

Mfr. #:: IPI029N06NAKSA1
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
生命週期:: 製造商新產品
數據表:: IPI029N06NAKSA1 數據表
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更多信息:: IPI029N06NAKSA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: IPI029N06

打包: 管子

部分別名: IPI029N06N IPI029N06NXK SP000962134

單位重量: 0.084199 oz

安裝方式: 通孔

商品名: 優化MOS

包裝盒: TO-262-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 136 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 8 ns

上升時間: 15 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 100 A

Vds-漏-源-擊穿電壓: 60 V

VGS-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 2.9 mOhms

晶體管極性: N通道

典型關斷延遲時間: 30 ns

典型開啟延遲時間: 17 ns

Qg-門電荷: 56 nC

正向跨導最小值: 160 S

Tags: IPI02, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI029N06NAKSA1 描述

***ical: Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

***p One Stop Global: Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262

***et: Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube

***i-Key: MOSFET N-CH 60V 24A TO262-3

***ronik: N-CH 60V 100A 2,9mOhm TO262-3

***ark: Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPI029N06NAKSA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

型號	製造商	描述	庫存	價格
IPI029N06NAKSA1 DISTI # 29709233	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	1000	500:$1.0464 100:$1.1904 15:$1.4880
IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 24A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	417In Stock	1000:$0.9870 500:$1.1912 100:$1.5315 10:$1.9060 1:$2.1100
IPI029N06NAKSA1 DISTI # C1S322000334748	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	1000	1000:$0.9020 500:$1.1700 100:$1.2800 25:$1.5600 5:$1.9200
IPI029N06NAKSA1 DISTI # SP000962134	Infineon Technologies AG	MV POWER MOS (Alt: SP000962134) RoHS: Compliant Min Qty: 1	Europe - 56000	1:€1.2629 10:€0.9849 25:€0.8799 50:€0.8009 100:€0.7769 500:€0.7609 1000:€0.7509
IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1	Infineon Technologies AG	MV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$0.7129 1000:$0.6869 2000:$0.6619 3000:$0.6399 5000:$0.6279
IPI029N06NAKSA1 DISTI # 34AC1699	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes	459	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900
IPI029N06NAKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	20868	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPI029N06N DISTI # 726-IPI029N06N	Infineon Technologies AG	MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant	485	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900
IPI029N06NAKSA1 DISTI # 726-IPI029N06NAKSA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant	315	1:$1.8300 10:$1.5500 100:$1.2400
IPI029N06NAKSA1 DISTI # 2781091	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant	459	1:£1.9300 10:£1.5300 100:£1.2300 250:£1.0900 500:£0.9560
IPI029N06NAKSA1 DISTI # 2781091	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant	459	1:$3.4000 10:$2.9600 100:$2.4100 250:$2.0400 500:$1.7600 1000:$1.6700
IPI029N06NAKSA1 DISTI # XSKDRABV0021253	INF	RoHS: Compliant	500	500:$1.4600

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