SCT2280KEC

Mfr. #:: SCT2280KEC
製造商:: Rohm Semiconductor
描述:: MOSFET N-CH 1200V 14A TO-247
生命週期:: 製造商新產品
數據表:: SCT2280KEC 數據表
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ECAD Model:
更多信息:: SCT2280KEC 更多信息

產品屬性
屬性值

製造商: 羅姆半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: SCT2280KE

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

技術: 碳化矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 108 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 29 ns

上升時間: 19 ns

VGS-柵極-源極-電壓: - 6 V to + 22 V

Id 連續漏極電流: 14 A

Vds-漏-源-擊穿電壓: 1200 V

VGS-th-Gate-Source-Threshold-Voltage: 1.6 V to 4 V

Rds-On-Drain-Source-Resistance: 280 mOhms

晶體管極性: N通道

典型關斷延遲時間: 47 ns

典型開啟延遲時間: 19 ns

Qg-門電荷: 36 nC

正向跨導最小值: 1.4 S

Tags: SCT228, SCT22, SCT2, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT2280KEC 描述

***Components: SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247 ROHM SCT2280KEC

***ical: Trans MOSFET N-CH SiC 1.2KV 14A 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3

***et Europe: Trans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 1200V 14A TO-247

***ukat: SiC-N-Ch 1200V 14A 108W 0,364R TO247

***ronik: SiC-N 1200V 14A 280mOhm TO247-3

***: 1200V, 10A 280MOHM, T0247 FET

***ark: Mosfet, N Channel, 1.2Kv, 14A, 0R28, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, 1200V, 14A, SIC, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:108W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C

***nell: MOSFET, 1200V, 14A, SIC, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:14A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:108W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Temperatura di Esercizio Min:-55°C

SCT2280KEC 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions: ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

Market price

型號	製造商	描述	庫存	價格
SCT2280KEC DISTI # 30328916	ROHM Semiconductor	0	210	150:$7.4349 60:$7.7022 30:$7.9101
SCT2280KEC DISTI # 34023146	ROHM Semiconductor	0	30	3:$10.3148
SCT2280KEC DISTI # SCT2280KEC-ND	ROHM Semiconductor	MOSFET N-CH 1200V 14A TO-247 Min Qty: 1 Container: Tube	3572In Stock	500:$6.5255 100:$7.4938 25:$8.6304 10:$9.0520 1:$10.0200
SCT2280KEC DISTI # SCT2280KEC	ROHM Semiconductor	Trans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube (Alt: SCT2280KEC) RoHS: Compliant Min Qty: 360 Container: Tube	Asia - 0
SCT2280KEC DISTI # SCT2280KEC	ROHM Semiconductor	Trans SiC MOSFET N-CH 1200V 14A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2280KEC) RoHS: Compliant Min Qty: 360 Container: Tube	Americas - 0
SCT2280KEC DISTI # 06X0712	ROHM Semiconductor	MOSFET, N CHANNEL, 1.2KV, 14A, 0R28, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes RoHS: Compliant	291	250:$7.1500 100:$7.4900 50:$8.0600 25:$8.6300 10:$9.0500 1:$10.0100
SCT2280KEC	ROHM Semiconductor	N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant Min Qty: 30	300Tube	150:$8.4600 120:$8.5400 60:$8.8100 30:$10.5700
SCT2280KEC DISTI # 755-SCT2280KEC	ROHM Semiconductor	MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC RoHS: Compliant	1041	1:$10.0100 10:$9.0500 25:$8.6300 100:$7.4900 250:$7.1500
SCT2280KEC	ROHM Semiconductor	MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC RoHS: Compliant	Americas - 180	30:$6.0700 2010:$5.7400 5010:$5.6100 10020:$5.5200
SCT2280KEC DISTI # 1246854	ROHM Semiconductor	SCT2280KEC SiC N-Channel MOSFET, 14 A, 1200 V SCT2280KE, 3-Pin TO-247 ROHM, EA	18	1:$9.9690 5:$8.8520 10:$8.4100 25:$8.0070 50:$7.8510
SCT2280KEC DISTI # TMOSP11161	ROHM Semiconductor	SiC-N 1200V 14A 280mOhm TO247-3 RoHS: Compliant	Stock DE - 1620Stock HK - 0Stock US - 0	30:$9.6800 60:$9.1300 90:$8.5700 120:$7.7500 180:$7.4700
SCT2280KEC DISTI # SCT2280KEC	ROHM Semiconductor	SiC-N-Ch 1200V 14A 108W 0,364R TO247 RoHS: Compliant	23	1:€11.5000 5:€9.5000 10:€8.5000 30:€8.2000
SCT2280KEC	ROHM Semiconductor	N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3	300	90:$5.8305
SCT2280KECU	ROHM Semiconductor		22	1:$8.9432 10:$8.3470 25:$7.7508 100:$7.1546 250:$6.5583 360:$5.9621
SCT2280KEC DISTI # 2345467	ROHM Semiconductor	MOSFET, 1200V, 14A, SIC, TO-247 RoHS: Compliant	341	25:$12.9200 10:$13.5500 1:$14.9900
SCT2280KEC DISTI # 2345467	ROHM Semiconductor	MOSFET, 1200V, 14A, SIC, TO-247 RoHS: Compliant	306	250:£5.7200 100:£6.1200 50:£6.5900 10:£7.0600 5:£8.1900 1:£8.8000
SCT2280KEC DISTI # XSFT00000032039	ROHM SEMICONDUCTOR	N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant	150 in Stock0 on Order	30:$9.1600

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