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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SUD35N10-26P-GE3 DISTI # V36:1790_09215450 | Vishay Intertechnologies | MOSFET N-CH D-S 100V DPAK | 0 |
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| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3516In Stock |
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| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3516In Stock |
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| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | 2000In Stock |
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| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: SUD35N10-26P-GE3) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
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| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 12A 3-Pin TO-252 T/R (Alt: SUD35N10-26P-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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| SUD35N10-26P-GE3 DISTI # 41R3809 | Vishay Intertechnologies | N CHANNEL MOSFET, 100V, 35A,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.4V,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| SUD35N10-26P-GE3. DISTI # 15AC4547 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.4V,Power Dissipation Pd:8.3W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
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| SUD35N10-26P-GE3 DISTI # 781-SUD35N10-26P-GE3 | Vishay Intertechnologies | MOSFET 100V 35A 83W 26mohm @ 10V RoHS: Compliant | 1896 |
|
| SUD35N1026PGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 2000 | |
| SUD35N10-26P-GE3 | Vishay Intertechnologies | MOSFET 100V 35A 83W 26mohm @ 10V | Americas - 2000 |
|
| SUD40N10-25-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3 | Americas - |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SUD35N10-26P-GE3 OMO.#: OMO-SUD35N10-26P-GE3 |
MOSFET 100V 35A 83W 26mohm @ 10V |
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Mfr.#: SUD35N10-26P-E3 OMO.#: OMO-SUD35N10-26P-E3 |
MOSFET 100V 35A 83W 26mohm @ 10V |
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Mfr.#: SUD35N10-26P-T4GE3 OMO.#: OMO-SUD35N10-26P-T4GE3 |
MOSFET N-Channel 100-V D-S |
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Mfr.#: SUD35N10-26P-GE3-CUT TAPE |
全新原裝 |
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Mfr.#: SUD35N10 OMO.#: OMO-SUD35N10-1190 |
全新原裝 |
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Mfr.#: SUD35N10-26 OMO.#: OMO-SUD35N10-26-1190 |
全新原裝 |
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Mfr.#: SUD35N10-26P OMO.#: OMO-SUD35N10-26P-1190 |
N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SUD35N10-26P) |
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Mfr.#: SUD35N10-26P-E3 OMO.#: OMO-SUD35N10-26P-E3-VISHAY |
MOSFET N-CH 100V 35A TO252 |
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Mfr.#: SUD35N10-26P-GE3 OMO.#: OMO-SUD35N10-26P-GE3-VISHAY |
MOSFET N-CH 100V 35A DPAK |
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Mfr.#: SUD35N1026PGE3 OMO.#: OMO-SUD35N1026PGE3-1190 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |