GS8162Z36DGB-150V

Mfr. #:: GS8162Z36DGB-150V
製造商:: GSI Technology
描述:: SRAM 1.8/2.5V 512K x 36 18M
生命週期:: 製造商新產品
數據表:: GS8162Z36DGB-150V 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: GS8162Z36DGB-150V 更多信息

產品屬性
屬性值

製造商：: GSI技術

產品分類：: 靜態隨機存取存儲器

RoHS：: Y

內存大小：: 18 Mbit

組織：: 512 k x 36

訪問時間：: 7.5 ns

最大時鐘頻率：: 150 MHz

接口類型：: 平行線

電源電壓 - 最大值：: 2.7 V

電源電壓 - 最小值：: 1.7 V

電源電流 - 最大值：: 175 mA, 190 mA

最低工作溫度：: 0 C

最高工作溫度：: + 70 C

安裝方式：: 貼片/貼片

包裝/案例：: BGA-119

打包：: 托盤

內存類型：: 特別提款權

系列：: GS8162Z36DGB

類型：: NBT PL/FT

品牌：: GSI技術

濕氣敏感：: 是的

產品類別：: 靜態隨機存取存儲器

出廠包裝數量：: 21

子類別：: 內存和數據存儲

商品名：: 靜態隨機存取存儲器

Tags: GS8162Z36DGB-1, GS8162Z36DGB, GS8162Z36DG, GS8162Z36D, GS8162Z3, GS8162Z, GS8162, GS816, GS81, GS8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GS8162Z36DGB-150V 描述

***et: SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 7.5ns/3.8ns 119-Pin F-BGA

***et: SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray

***-Wing Technology: e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***or: QDR SRAM, 2MX9, 0.45NS, CMOS, PB

***et Europe: SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

***-Wing Technology: e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb

***ress Semiconductor SCT: DDR-II CIO, 18 Mbit Density, BGA-165, RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***et: SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

***-Wing Technology: e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb

***ress Semiconductor SCT: DDR-II CIO, 18 Mbit Density, BGA-165

*** Services: CoC and 2-years warranty / RFQ for pricing

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***or: DDR SRAM, 512KX36, 0.45NS, CMOS,

***ark: 18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS

***ical: SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA

***i-Key: IC SRAM 18MBIT PARALLEL 165LFBGA

***ark: 18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS

***et: SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA

***i-Key: IC SRAM 18MBIT PARALLEL 165LFBGA

GS8162Z36DGB-150V 更多信息

NBT SRAMs: GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

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