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FDMC8296

FDMC8296
Mfr. #:
FDMC8296
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 30V N-CHANNEL POWER TRENCH
生命週期:
製造商新產品
數據表:
FDMC8296 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMC8296 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-33-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
12 A
Rds On - 漏源電阻：
6.5 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
7.6 nC, 16 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.3 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
0.8 mm
長度：
3.3 mm
系列：
FDMC8296
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
44 S
秋季時間：
2 ns
產品類別：
MOSFET
上升時間：
3 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
19 ns
典型的開啟延遲時間：
9 ns
單位重量：
0.007408 oz
Tags
FDMC829, FDMC82, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    F***a
    F***a
    ES

    Everything as listed in the kit, i arrive very fast and in good condition

    2019-05-05
    E**y
    E**y
    MX

    Good seller, I tested some pieces, and all it's ok! Very recommended!

    2019-06-12
    V***n
    V***n
    RU

    Whole, unharmed.

    2019-03-24
***ure Electronics
N-Channel 30 V 8 mOhm 23 nC SMT PowerTrench® Mosfet - MLP 3.3x3.3
***emi
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***rchild Semiconductor
This N-Channel MOSFET is produced using FairchildSemiconductor‘s advanced Power Trench® process thatbeen especially tailored to minimize the on-state resistance.device is welll suited for Power Management and load switchingapplications common in Notebook Computers and PortableBattery Packs.
***ark
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***Yang
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This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for power management and load switching applications common in notebook computers and portable battery packs.
***emi
N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ
***ment14 APAC
MOSFET, N-CH, 30V, 35A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:30V; On Resistance
***rchild Semiconductor
The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***nell
MOSFET, N-CH, 30V, 35A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
Single N-Channel 30 V 17.9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8
***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R
***ark
Mosfet, N-Ch, 30V, 50A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipationrohs Compliant: Yes
***ure Electronics
N-Channel 30 V 7.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ
***Yang
Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 30V, 14A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
***(Formerly Allied Electronics)
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***roFlash
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***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissi
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
FDMC8200/FDMC8296 Dual N-Ch PowerTrench® MOSFET
The ON Semiconductor FDMC8200 and FDMC8296 Dual N-Channel PowerTrench® MOSFETs are 30V, 9.5 mΩ, and 20 mΩ devices that include two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node of the ON Semiconductor FDMC8200 / FDMC8296 has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET in these ON Semiconductor devices are designed to provide optimal power efficiency. The FDMC8200 / FDMC8296 is optimized for use in mobile computing, mobile Internet devices, and general purpose point of load applications.
型號 製造商 描述 庫存 價格
FDMC8296
DISTI # V36:1790_06300734		ON Semiconductor30V RP5 NCH MOSFET0
  • 3000:$0.6989
FDMC8296
DISTI # FDMC8296CT-ND		ON SemiconductorMOSFET N-CH 30V 12A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMC8296
    DISTI # FDMC8296DKR-ND    		ON SemiconductorMOSFET N-CH 30V 12A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMC8296
      DISTI # FDMC8296TR-ND      		ON SemiconductorMOSFET N-CH 30V 12A POWER33
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.5242
      FDMC8296
      DISTI # FDMC8296      		ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin Power 33 T/R - Bulk (Alt: FDMC8296)
      RoHS: Compliant
      Min Qty: 374
      Container: Bulk      		Americas - 0
      • 3740:$0.8269
      • 1870:$0.8479
      • 1122:$0.8579
      • 748:$0.8699
      • 374:$0.8749
      FDMC8296
      DISTI # FDMC8296      		ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin Power 33 T/R (Alt: FDMC8296)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
      • 150000:$0.5084
      • 75000:$0.5168
      • 30000:$0.5347
      • 15000:$0.5537
      • 9000:$0.5743
      • 6000:$0.5964
      • 3000:$0.6202
      FDMC8296
      DISTI # FDMC8296      		ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8296)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.6169
      • 18000:$0.6319
      • 12000:$0.6409
      • 6000:$0.6489
      • 3000:$0.6529
      FDMC8296
      DISTI # 512-FDMC8296      		ON SemiconductorMOSFET 30V N-CHANNEL POWER TRENCH
      RoHS: Compliant      		3548
      • 1:$1.5100
      • 10:$1.2800
      • 100:$0.9900
      • 500:$0.8750
      • 1000:$0.6900
      • 3000:$0.6120
      • 9000:$0.5890
      FDMC8296Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		333770
      • 1000:$0.8800
      • 500:$0.9300
      • 100:$0.9700
      • 25:$1.0100
      • 1:$1.0900
      FDMC8296Fairchild Semiconductor Corporation12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET588
      • 477:$0.3750
      • 84:$0.4200
      • 1:$1.2000
      FDMC8296Fairchild Semiconductor Corporation 3808
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        		 全新原裝
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        		 IC FPGA 240 I/O 484FBGA Cyclone V E
        可用性
        庫存:
        Available
        訂購:
        1986
        輸入數量:
        FDMC8296的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$1.51
        US$1.51
        10
        US$1.28
        US$12.80
        100
        US$0.99
        US$99.00
        500
        US$0.88
        US$437.50
        1000
        US$0.69
        US$690.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
        從...開始
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