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SPB17N80C3

SPB17N80C3
Mfr. #:
SPB17N80C3
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
生命週期:
製造商新產品
數據表:
SPB17N80C3 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
SPB17N80C3 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PG-TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
17 A
Rds On - 漏源電阻：
290 mOhms
Vgs th - 柵源閾值電壓：
2.1 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
88 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
227 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
系列：
CoolMOS C3
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌科技
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
72 ns
典型的開啟延遲時間：
25 ns
第 # 部分別名：
SP000013370 SPB17N80C3ATMA1 SPB17N8C3XT
單位重量：
0.139332 oz
Tags
SPB17N80C3, SPB17N, SPB17, SPB1, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1
***ure Electronics
Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 T/R
***p One Stop Global
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263
*** Source Electronics
MOSFET N-CH 800V 17A D2PAK
***ronik
N-CH 800V 17A 290mOhm TO263-3
***et
LOW POWER_PRICE/PERFORM
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:17A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:17A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.25ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:17A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:800V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
SPB17N80C3ATMA1
DISTI # SPB17N80C3ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 17A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$2.7378
SPB17N80C3ATMA1
DISTI # SPB17N80C3ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 17A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$3.3436
  • 100:$4.1292
  • 10:$5.0360
  • 1:$5.6400
SPB17N80C3ATMA1
DISTI # SPB17N80C3ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 17A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$3.3436
  • 100:$4.1292
  • 10:$5.0360
  • 1:$5.6400
SPB17N80C3
DISTI # C1S322000116081		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263
RoHS: Compliant		3
  • 1:$4.4500
SPB17N80C3
DISTI # SPB17N80C3ATMA1		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB17N80C3ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.4900
  • 2000:$2.3900
  • 4000:$2.2900
  • 6000:$2.1900
  • 10000:$2.1900
SPB17N80C3
DISTI # SPB17N80C3		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 (Alt: SPB17N80C3)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    SPB17N80C3
    DISTI # SP000013370    		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 (Alt: SP000013370)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 1000:€2.2900
    • 2000:€2.2900
    • 4000:€2.1900
    • 6000:€2.0900
    • 10000:€1.9900
    SPB17N80C3ATMA1
    DISTI # 33P8201    		Infineon Technologies AGMOSFET, N CHANNEL, 800V, 17A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
    • 1:$4.7100
    • 10:$4.0000
    • 25:$3.8200
    • 50:$3.6500
    • 100:$3.4700
    • 250:$3.2900
    • 500:$2.9600
    SPB17N80C3ATMA1.
    DISTI # 26AC3953    		Infineon Technologies AGLOW POWER_LEGACY , ROHS COMPLIANT: YES0
    • 1:$2.4900
    • 2000:$2.3900
    • 4000:$2.2900
    • 6000:$2.1900
    SPB17N80C3
    DISTI # 726-SPB17N80C3    		Infineon Technologies AGMOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
    RoHS: Compliant    		0
    • 1:$4.7100
    • 10:$4.0000
    • 100:$3.4700
    • 250:$3.2900
    • 500:$2.9600
    • 1000:$2.4900
    SPB17N80C3ATMA1
    DISTI # 726-SPB17N80C3ATMA1    		Infineon Technologies AGMOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
    RoHS: Compliant    		0
    • 1:$4.7100
    • 10:$4.0000
    • 100:$3.4700
    • 250:$3.2900
    • 500:$2.9600
    • 1000:$2.4900
    SPB17N80C3ATMA1
    DISTI # 7528482    		Infineon Technologies AGMOSFET N-CHANNEL 800V 17A COOLMOS TO263, EA33
    • 1:£3.4600
    • 10:£2.4600
    • 50:£2.4000
    • 250:£2.2600
    • 500:£2.0300
    SPB17N80C3Infineon Technologies AG 730
      SPB17N80C3Infineon Technologies AG17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB240
      • 196:$4.5705
      • 46:$5.1245
      • 1:$8.3100
      SPB17N80C3
      DISTI # TMOSP8687      		Infineon Technologies AGN-CH 800V17A290mOhm TO263-3
      RoHS: Compliant      		Stock DE - 0Stock US - 0
      • 1000:$3.6800
      SPB17N80C3Infineon Technologies AGINSTOCK20472
        SPB17N80C3ATMA1
        DISTI # 1664102RL        		Infineon Technologies AGMOSFET, N, TO-263
        RoHS: Compliant        		0
        • 1:$7.4600
        • 10:$6.3400
        • 100:$5.5000
        • 250:$5.2100
        • 500:$4.6900
        • 1000:$3.9400
        • 2000:$3.7500
        • 5000:$3.6200
        SPB17N80C3ATMA1
        DISTI # 1664102        		Infineon Technologies AGMOSFET, N, TO-263
        RoHS: Compliant        		0
        • 1:$7.4600
        • 10:$6.3400
        • 100:$5.5000
        • 250:$5.2100
        • 500:$4.6900
        • 1000:$3.9400
        • 2000:$3.7500
        • 5000:$3.6200
        SPB17N80C3Infineon Technologies AG800V,17A,N channel Power MOSFET50
        • 1:$4.0300
        • 100:$3.3600
        • 500:$2.9600
        • 1000:$2.8800
        SPB17N80C3ATMA1
        DISTI # 1664102        		Infineon Technologies AGMOSFET, N, TO-263
        RoHS: Compliant        		0
        • 1:£4.3700
        • 10:£3.0300
        • 100:£2.9400
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        可用性
        庫存:
        Available
        訂購:
        1986
        輸入數量:
        SPB17N80C3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$4.70
        US$4.70
        10
        US$4.00
        US$40.00
        100
        US$3.46
        US$346.00
        250
        US$3.29
        US$822.50
        500
        US$2.95
        US$1 475.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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