IRFU13N20DPBF

IRFU13N20DPBF
Mfr. #:
IRFU13N20DPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 200V 13A 235mOhm 25nC
生命週期:
製造商新產品
數據表:
IRFU13N20DPBF 數據表
交貨:
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ECAD Model:
更多信息:
IRFU13N20DPBF 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-251-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
200 V
Id - 連續漏極電流:
13 A
Rds On - 漏源電阻:
235 mOhms
Vgs - 柵源電壓:
30 V
Qg - 門電荷:
25 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
110 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
6.22 mm
長度:
6.73 mm
晶體管類型:
1 N-Channel
寬度:
2.38 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
6.2 S
秋季時間:
10 ns
產品類別:
MOSFET
上升時間:
27 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
17 ns
典型的開啟延遲時間:
11 ns
第 # 部分別名:
SP001573640
單位重量:
0.139332 oz
Tags
IRFU13N, IRFU13, IRFU1, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
*** Source Electronics
Trans MOSFET N-CH 200V 17A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 17A I-PAK
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***(Formerly Allied Electronics)
MOSFET, 200V, 17A, 165 MOHM, 27 NC QG, I-PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***(Formerly Allied Electronics)
IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
***ineon SCT
-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***ark
Mosfet Transistor, N Channel, 10 A, 250 V, 0.32 Ohm, 10 V, 4.5 V
***emi
Single N-Channel Power MOSFET 250V, 10A, 420mΩ
***r Electronics
Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
N CHANNEL MOSFET, 250V, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 52W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/qfet Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRFU13N20DPBF
DISTI # V99:2348_13892676
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2906
  • 9000:$0.3943
  • 3000:$0.4381
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
  • 1:$0.9259
IRFU13N20DPBF
DISTI # IRFU13N20DPBF-ND
Infineon Technologies AGMOSFET N-CH 200V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
5875In Stock
  • 1000:$0.5978
  • 500:$0.7572
  • 100:$0.9764
  • 10:$1.2350
  • 1:$1.3900
IRFU13N20DPBF
DISTI # 31335313
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 16:$0.8195
IRFU13N20DPBF
DISTI # 24161208
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
1980
  • 1000:$0.5136
  • 150:$0.6096
  • 22:$0.6720
IRFU13N20DPBF
DISTI # IRFU13N20DPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.4169
  • 6000:$0.4019
  • 12000:$0.3869
  • 18000:$0.3739
  • 30000:$0.3679
IRFU13N20DPBF
DISTI # IRFU13N20DPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000
Asia - 0
  • 3000:$0.4600
  • 6000:$0.4472
  • 9000:$0.4351
  • 15000:$0.4237
  • 30000:$0.4182
  • 75000:$0.4128
  • 150000:$0.4076
IRFU13N20DPBF
DISTI # 70018362
Infineon Technologies AGIRFU13N20DPBF N-channel MOSFET Module,13 A,200 V,3-Pin IPAK
RoHS: Compliant
0
  • 675:$1.4400
IRFU13N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.235 Ohm 38 nC HEXFET Power Mosfet - IPAK
RoHS: Compliant
2570Tube
  • 20:$0.5550
  • 200:$0.5000
  • 1000:$0.4250
IRFU13N20DPBF
DISTI # 942-IRFU13N20DPBF
Infineon Technologies AGMOSFET MOSFT 200V 13A 235mOhm 25nC
RoHS: Compliant
2828
  • 1:$1.1900
  • 10:$1.0200
  • 100:$0.7790
  • 500:$0.6890
  • 1000:$0.5440
IRFU13N20DPBF
DISTI # 8655847P
Infineon Technologies AGMOSFET N-CH 200V 13A HEXFET SMPS IPAK, TU445
  • 100:£0.5640
  • 250:£0.5310
  • 500:£0.4990
  • 1350:£0.3930
IRFU13N20DPBF
DISTI # C1S322000496783
Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
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可用性
庫存:
Available
訂購:
1986
輸入數量:
IRFU13N20DPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.18
US$1.18
10
US$1.01
US$10.10
100
US$0.78
US$77.90
500
US$0.69
US$344.50
1000
US$0.54
US$544.00
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