SI4116DY-T1-GE3

SI4116DY-T1-GE3
Mfr. #:
SI4116DY-T1-GE3
製造商:
Vishay
描述:
MOSFET N-CH 25V 18A 8-SOIC
生命週期:
製造商新產品
數據表:
SI4116DY-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
SI4116DY-T1-GE3 更多信息
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
打包
捲軸
部分別名
SI4466DY-T1-E3-S
單位重量
0.006596 oz
安裝方式
貼片/貼片
包裝盒
SOIC-Narrow-8
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
2.5 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
15 ns
上升時間
11 ns
VGS-柵極-源極-電壓
12 V
Id 連續漏極電流
12.7 A
Vds-漏-源-擊穿電壓
25 V
Rds-On-Drain-Source-Resistance
8.6 mOhms
晶體管極性
N通道
典型關斷延遲時間
50 ns
典型開啟延遲時間
13 ns
通道模式
增強
Tags
SI4116DY-T, SI4116, SI411, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4116DY-T1-GE3
DISTI # V72:2272_09216447
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant
1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 10:$0.8532
  • 1:$0.9820
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
7500In Stock
  • 2500:$0.4911
SI4116DY-T1-GE3
DISTI # 29064963
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant
1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 14:$0.8532
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.8429
  • 5000:€0.6039
  • 10000:€0.4899
  • 15000:€0.4329
  • 25000:€0.4149
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4116DY-T1-GE3
DISTI # 16P3725
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$0.8220
SI4116DY-T1-GE3
DISTI # 16P3725
Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes78
  • 1:$1.5100
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0500
  • 100:$0.9550
  • 250:$0.8890
  • 500:$0.8220
SI4116DY-T1-GE3
DISTI # R1082526
Vishay DaleTRANSITOR,SI4804BDY
RoHS: Compliant
0
  • 5:$1.2800
  • 25:$1.0600
  • 100:$0.9700
  • 250:$0.8900
  • 500:$0.8300
SI4116DY-T1-GE3
DISTI # 781-SI4116DY-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
RoHS: Compliant
2103
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.6010
  • 2500:$0.6000
SI4116DY-T1-GE3
DISTI # 7103317P
Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, RL2600
  • 50:£0.6260
SI4116DY-T1-GE3
DISTI # 7103317
Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, PK725
  • 5:£0.9720
  • 50:£0.6260
SI4116DYT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 10000
    SI4116DY-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
    RoHS: Compliant
    Americas -
    • 2500:$0.4820
    • 10000:$0.4410
    SI4116DY-T1-GE3
    DISTI # 1794777
    Vishay IntertechnologiesMOSFET, N CH, 25V, 18A, 8SOIC
    RoHS: Compliant
    0
    • 5:£1.0800
    • 25:£0.6960
    • 100:£0.6720
    • 250:£0.6470
    • 500:£0.6230
    SI4116DY-T1-GE3
    DISTI # C1S803601003591
    Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
    RoHS: Compliant
    1222
    • 250:$0.6961
    • 100:$0.6981
    • 25:$0.8498
    • 10:$0.8533
    圖片 型號 描述
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3

    MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3

    MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3-VISHAY

    IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
    SI4116DY

    Mfr.#: SI4116DY

    OMO.#: OMO-SI4116DY-1190

    全新原裝
    SI4116DY-T1

    Mfr.#: SI4116DY-T1

    OMO.#: OMO-SI4116DY-T1-1190

    全新原裝
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3-VISHAY

    MOSFET N-CH 25V 18A 8-SOIC
    SI4116DYT1GE3

    Mfr.#: SI4116DYT1GE3

    OMO.#: OMO-SI4116DYT1GE3-1190

    Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    可用性
    庫存:
    Available
    訂購:
    5500
    輸入數量:
    SI4116DY-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.57
    US$0.57
    10
    US$0.54
    US$5.39
    100
    US$0.51
    US$51.03
    500
    US$0.48
    US$241.00
    1000
    US$0.45
    US$453.60
    從...開始
    Top