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IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1
Mfr. #:
IPD80R2K0P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-CH 800V 3A TO252-3
生命週期:
製造商新產品
數據表:
IPD80R2K0P7ATMA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IPD80R2K0P7ATMA1 更多信息
產品屬性
屬性值
Tags
IPD80R2K, IPD80R2, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
型號 製造商 描述 庫存 價格
IPD80R2K0P7ATMA1
DISTI # V36:1790_18205136		Infineon Technologies AGLOW POWER_NEW5000
  • 2500:$0.3682
IPD80R2K0P7ATMA1
DISTI # V72:2272_18205136		Infineon Technologies AGLOW POWER_NEW2500
  • 1000:$0.3577
  • 500:$0.4552
  • 250:$0.4909
  • 100:$0.5094
  • 25:$0.6433
  • 10:$0.6448
  • 1:$0.7349
IPD80R2K0P7ATMA1
DISTI # IPD80R2K0P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 3A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6764In Stock
  • 1000:$0.4281
  • 500:$0.5423
  • 100:$0.6992
  • 10:$0.8850
  • 1:$1.0000
IPD80R2K0P7ATMA1
DISTI # IPD80R2K0P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 3A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6764In Stock
  • 1000:$0.4281
  • 500:$0.5423
  • 100:$0.6992
  • 10:$0.8850
  • 1:$1.0000
IPD80R2K0P7ATMA1
DISTI # IPD80R2K0P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 3A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.3527
  • 12500:$0.3547
  • 5000:$0.3685
  • 2500:$0.3879
IPD80R2K0P7ATMA1
DISTI # 30656610		Infineon Technologies AGLOW POWER_NEW5000
  • 2500:$0.3958
IPD80R2K0P7ATMA1
DISTI # 30532133		Infineon Technologies AGLOW POWER_NEW2500
  • 1000:$0.3845
  • 500:$0.4893
  • 250:$0.5277
  • 100:$0.5476
  • 25:$0.6915
  • 20:$0.6932
IPD80R2K0P7ATMA1
DISTI # 30163446		Infineon Technologies AGLOW POWER_NEW2500
  • 2500:$0.3724
IPD80R2K0P7ATMA1
DISTI # SP001634906		Infineon Technologies AGLOW POWER_NEW (Alt: SP001634906)
RoHS: Compliant
Min Qty: 2500		Europe - 2500
  • 2500:€0.4659
  • 5000:€0.3809
  • 10000:€0.3489
  • 15000:€0.3219
  • 25000:€0.2989
IPD80R2K0P7ATMA1
DISTI # IPD80R2K0P7ATMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD80R2K0P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3619
  • 5000:$0.3489
  • 10000:$0.3369
  • 15000:$0.3249
  • 25000:$0.3199
IPD80R2K0P7ATMA1
DISTI # 24AC9042		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes1655
  • 1000:$0.3780
  • 500:$0.4790
  • 250:$0.5110
  • 100:$0.5420
  • 50:$0.5970
  • 25:$0.6510
  • 10:$0.7060
  • 1:$0.8200
IPD80R2K0P7ATMA1
DISTI # 726-IPD80R2K0P7ATMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		9796
  • 1:$0.8200
  • 10:$0.7060
  • 100:$0.5420
  • 500:$0.4790
  • 1000:$0.3780
IPD80R2K0P7ATMA1
DISTI # 2771320		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-252
RoHS: Compliant		2485
  • 500:£0.3760
  • 250:£0.4010
  • 100:£0.4250
  • 25:£0.5630
  • 5:£0.6230
IPD80R2K0P7ATMA1
DISTI # XSKDRABV0021241		Infineon Technologies AG 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$0.5264
  • 2500:$0.5640
IPD80R2K0P7ATMA1
DISTI # 2771320		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-252
RoHS: Compliant		1655
  • 1000:$0.6360
  • 500:$0.8060
  • 100:$1.0400
  • 5:$1.3200
圖片 型號 描述
IPD80R2K0P7ATMA1

Mfr.#: IPD80R2K0P7ATMA1

OMO.#: OMO-IPD80R2K0P7ATMA1

 MOSFET
IPD80R2K7C3AATMA1

Mfr.#: IPD80R2K7C3AATMA1

OMO.#: OMO-IPD80R2K7C3AATMA1

 MOSFET AUTOMOTIVE
IPD80R2K8CEATMA1

Mfr.#: IPD80R2K8CEATMA1

OMO.#: OMO-IPD80R2K8CEATMA1

 MOSFET N-Ch 800V 1.9A DPAK-2
IPD80R2K4P7ATMA1

Mfr.#: IPD80R2K4P7ATMA1

OMO.#: OMO-IPD80R2K4P7ATMA1

 MOSFET
IPD80R2K0P7ATMA1

Mfr.#: IPD80R2K0P7ATMA1

OMO.#: OMO-IPD80R2K0P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 3A TO252-3
IPD80R2K7C3AATMA1

Mfr.#: IPD80R2K7C3AATMA1

OMO.#: OMO-IPD80R2K7C3AATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO252-3
IPD80R2K0P7ATMA1-CUT TAPE

Mfr.#: IPD80R2K0P7ATMA1-CUT TAPE

OMO.#: OMO-IPD80R2K0P7ATMA1-CUT-TAPE-1190

 全新原裝
IPD80R2K8CE

Mfr.#: IPD80R2K8CE

OMO.#: OMO-IPD80R2K8CE-1190

 Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: IPD80R2K8CE)
IPD80R2K8CEBTMA1 , 2SD24

Mfr.#: IPD80R2K8CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R2K8CEBTMA1-2SD24-1190

 全新原裝
IPD80R2K8CEBTMA1

Mfr.#: IPD80R2K8CEBTMA1

OMO.#: OMO-IPD80R2K8CEBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 1.9A DPAK-2
可用性
庫存:
Available
訂購:
1000
輸入數量:
IPD80R2K0P7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.48
US$0.48
10
US$0.46
US$4.56
100
US$0.43
US$43.19
500
US$0.41
US$203.95
1000
US$0.38
US$383.90
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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