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FDMS3602AS

FDMS3602AS
Mfr. #:
FDMS3602AS
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET DUAL N-CH. ER TRENCH MO
生命週期:
製造商新產品
數據表:
FDMS3602AS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
通道數：
2 Channel
晶體管極性：
N通道
配置：
雙重的
商品名：
功率級 PowerTrench
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
系列：
FDMS3602AS
晶體管類型：
2 N-Channel
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
單位重量：
0.006032 oz
Tags
FDMS3602, FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
***ical
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin PQFN T/R - Tape and Reel
***el Electronic
RICHTEK RT9711AGBGPower Load Switch, High Side, Active High, 1 Output, 5.5V, 2.5A, SOT-23-5
***emi
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 25 V 8.5/2.4 mOhm 27/82 nC 2.2/2.5 W Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin Power 56 T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V
***ark
DUAL N CH MOSFET, POWERTRENCH, 25V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:25V; On Resistance Rds(on), N Channel:0.0013ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, ASYMMETRIC, 25V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ
***ark
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; No. of Pins:8 ;RoHS Compliant: Yes
***rchild Semiconductor
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ure Electronics
Single N-Channel 25 V 5.2 mOhm 18 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 25V,A, 5mOhm, 12nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 25V 19A 8-Pin QFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***(Formerly Allied Electronics)
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0046Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 20V, 30A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 41.7W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***et Japan
Transistor MOSFET Array Dual N-Channel 25V 16A/31A 8-Pin TISON T/R
***ark
Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TISON-8, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
型號 製造商 描述 庫存 價格
FDMS3602AS
DISTI # FDMS3602ASCT-ND		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMS3602AS
    DISTI # FDMS3602ASDKR-ND    		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMS3602AS
      DISTI # FDMS3602ASTR-ND      		ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.7685
      FDMS3602AS
      DISTI # FDMS3602AS      		ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3602AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3602AS
      DISTI # 68X0375      		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$1.0400
      FDMS3602AS
      DISTI # 512-FDMS3602AS      		ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant      		2430
      • 1:$1.5300
      • 10:$1.3000
      • 100:$1.0400
      • 500:$0.9060
      • 1000:$0.7510
      • 3000:$0.6990
      FDMS3602ASFairchild Semiconductor Corporation 
      RoHS: Not Compliant      		9000
      • 1000:$0.9900
      • 500:$1.0400
      • 100:$1.0800
      • 25:$1.1300
      • 1:$1.2200
      圖片 型號 描述
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      Mfr.#: GS1662-IBE3

      OMO.#: OMO-GS1662-IBE3

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      Mfr.#: RDC1047A03

      OMO.#: OMO-RDC1047A03-450

      		 Motion & Position Sensors Industrial Motion & Position Sensors 10KOHM 47mm TRAVEL +-0.5% LINEARITY
      1011-245-0805

      Mfr.#: 1011-245-0805

      OMO.#: OMO-1011-245-0805-419

      		 Automotive Connectors 180 DEG STRAIGHT BACKSHELL
      LM5050MK-1/NOPB

      Mfr.#: LM5050MK-1/NOPB

      OMO.#: OMO-LM5050MK-1-NOPB-TEXAS-INSTRUMENTS

      		 Gate Drivers Hi Side OR-ing FET Cntl
      AFBR-S10PS010Z

      Mfr.#: AFBR-S10PS010Z

      OMO.#: OMO-AFBR-S10PS010Z-BROADCOM

      		 TX FIBER OPTIC POINT SENSOR LIGH
      GS1662-IBE3

      Mfr.#: GS1662-IBE3

      OMO.#: OMO-GS1662-IBE3-SEMTECH

      		 IC SERIALIZER SMPTE 100BGA
      可用性
      庫存:
      Available
      訂購:
      1985
      輸入數量:
      FDMS3602AS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.52
      US$1.52
      10
      US$1.29
      US$12.90
      100
      US$1.03
      US$103.00
      500
      US$0.91
      US$453.00
      1000
      US$0.75
      US$751.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
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