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APT20M38BVRG

APT20M38BVRG
Mfr. #:
APT20M38BVRG
製造商:
Microchip / Microsemi
描述:
MOSFET FG, MOSFET, 200V, TO-247, RoHS
生命週期:
製造商新產品
數據表:
APT20M38BVRG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT20M38BVRG DatasheetAPT20M38BVRG Datasheet (P4)
ECAD Model:
產品屬性
屬性值
製造商：
微芯片
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
67 A
Rds On - 漏源電阻：
38 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
225 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
370 W
配置：
單身的
頻道模式：
增強
打包：
管子
晶體管類型：
1 N-Channel
品牌：
微芯片/Microsemi
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
21 ns
出廠包裝數量：
1
子類別：
MOSFET
典型關斷延遲時間：
48 ns
典型的開啟延遲時間：
14 ns
單位重量：
0.211644 oz
Tags
APT20M38B, APT20M38, APT20M3, APT20M, APT20, APT2, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247
***ical
Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS5 200 V 38 mOhm TO-247
*** Stop Electro
Power Field-Effect Transistor, 67A I(D), 200V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package
***ure Electronics
N-Channel 250 V 45 mO 160 nC Flange Mount SuperMESH™ MOSFET - TO-247
***ark
MOSFET, N CHANNEL, 250V, 52A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package
***ure Electronics
N-Channel 200 V 34 mOhm Flange Mount STripFET Power Mosfet - TO-247
***ark
MOSFET, N CHANNEL, 200V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:37A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247
***nell
MOSFET, N CH, 650V, 84A, 0R024, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
***r Electronics
Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型號 製造商 描述 庫存 價格
APT20M38BVRG
DISTI # V36:1790_09096220		Microsemi CorporationTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247
RoHS: Compliant		463
  • 1000:$7.7890
  • 500:$8.6910
  • 250:$9.3770
  • 100:$10.3650
  • 50:$10.8520
  • 30:$11.5820
APT20M38BVRG
DISTI # APT20M38BVRG-ND		Microsemi CorporationMOSFET N-CH 200V 67A TO-247
RoHS: Compliant
Min Qty: 40
Container: Tube		Temporarily Out of Stock
  • 40:$11.8692
APT20M38BVRG
DISTI # 32884824		Microsemi CorporationTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247
RoHS: Compliant		463
  • 30:$11.5820
APT20M38BVRG
DISTI # APT20M38BVRG		Microchip Technology IncTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT20M38BVRG)
RoHS: Compliant
Min Qty: 40
Container: Tube		Americas - 0
  • 400:$7.8900
  • 200:$8.0900
  • 120:$8.2900
  • 80:$8.5900
  • 40:$8.8900
APT20M38BVRG
DISTI # 494-APT20M38BVRG		Microchip Technology IncMOSFET Power MOSFET - MOS5
RoHS: Compliant		0
  • 1:$13.8400
  • 10:$12.5800
  • 25:$11.6300
  • 50:$11.0000
  • 100:$10.6100
  • 250:$9.6900
  • 500:$9.0700
APT20M38BVRG
DISTI # APT20M38BVRG		Microsemi CorporationPOWER MOSFET TRANSISTOR
RoHS: Compliant		0
  • 40:$8.4200
  • 50:$8.2000
  • 100:$8.1000
圖片 型號 描述
SI2304BDS-T1-GE3

Mfr.#: SI2304BDS-T1-GE3

OMO.#: OMO-SI2304BDS-T1-GE3

 MOSFET 30V 3.2A 1.08W 70mohm @ 10V
IRFP31N50LPBF

Mfr.#: IRFP31N50LPBF

OMO.#: OMO-IRFP31N50LPBF

 MOSFET N-CH 500V HEXFET MOSFET
SI2304BDS-T1-GE3

Mfr.#: SI2304BDS-T1-GE3

OMO.#: OMO-SI2304BDS-T1-GE3-VISHAY

 MOSFET N-CH 30V 2.6A SOT23-3
IRFP31N50LPBF

Mfr.#: IRFP31N50LPBF

OMO.#: OMO-IRFP31N50LPBF-VISHAY

 MOSFET N-CH 500V 31A TO-247AC
0451010.MRL

Mfr.#: 0451010.MRL

OMO.#: OMO-0451010-MRL-LITTELFUSE

 Surface Mount Fuses 125V 10A
可用性
庫存:
Available
訂購:
2500
輸入數量:
APT20M38BVRG的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$13.84
US$13.84
10
US$12.58
US$125.80
25
US$11.63
US$290.75
50
US$11.00
US$550.00
100
US$10.61
US$1 061.00
250
US$9.69
US$2 422.50
500
US$9.07
US$4 535.00
1000
US$8.09
US$8 090.00
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